Method and apparatus for manufacturing white light-emitting device

• US 8,796,050 B2
• Filed: 12/28/2011
• Issued: 08/05/2014
• Est. Priority Date: 01/17/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Yoo, Cheol-jun, Hong, Seong-jae, Tsutsui, Tsuyoshi, Kim, Shin-kun
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US13/338,678
• Publication Number:
  US 20120184056A1
• Time in Patent Office: 951 Days
• Field of Search: 438/28, 438/460, 438/464, 438/26, 438/34, 257/E33.59
• US Class Current: 438/26
• CPC Class Codes: B05C 1/027 only at particular parts of the articles at particular parts of work of indefinite length B05C1/16
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.

Claims

1. A method of manufacturing a light-emitting device, the method comprising:

forming a plurality of light emitting devices on a first main surface of a wafer;

after forming the plurality of light emitting devices on the wafer, thinning the wafer by removing material from a second main surface of the wafer, wherein the second main surface opposes the first main surface;

disposing the thinned wafer on a carrier film so that the second main surface of the wafer faces the carrier film; and

forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer, wherein the phosphor layer faces and overlies the first main surface of the wafer,

wherein the forming of the phosphor layer comprises;

disposing the carrier film, on which the wafer is disposed, on a vacuum table;

closely adhering and fixing the carrier film on the vacuum table by vacuum suction pressure;

coating a phosphor paste on the first surface of the wafer; and

forming the phosphor layer by hardening the phosphor paste, and

wherein the vacuum table has a stepped structure, in which a center portion thereof protrudes to be higher than peripheral portions thereof.

2. The method of claim 1, wherein a carrier frame is disposed along a circumference of the carrier film, and wherein a diameter of the protruding center portion of the vacuum table is smaller than an inner diameter of the carrier frame.

3. The method of claim 2, wherein the carrier frame formed along the circumference of the carrier film is closely adhered and fixed to the peripheral portions of the vacuum table, and the wafer disposed on the carrier film is closely adhered and fixed to the center portion of the vacuum table.

4. The method of claim 2, wherein a height of the center portion of the vacuum table is higher than a height of the carrier frame.

5. The method of claim 1, wherein the coating of the phosphor paste comprises:

disposing a printing mask on the wafer;

providing the phosphor paste on the printing mask; and

pressurizing the phosphor paste by using a squeegee and uniformly coating the phosphor paste on the wafer.

6. The method of claim 5, wherein the printing mask comprises a mask frame formed around the circumference of the printing mask to support the printing mask, a first masking member formed to cover a region other than the wafer, and a printing region corresponding to the wafer.

7. The method of claim 6, wherein the printing region comprises a plurality of openings having the same pattern as that of the plurality of light-emitting devices formed on the wafer, a second masking member formed to correspond to the scribe line formed between the light-emitting devices, and third masking members formed to correspond to electrode pads formed on the light-emitting devices.

8. The method of claim 6, wherein the printing region comprises a plurality of openings having the same pattern as that of the plurality of light-emitting devices formed on the wafer and a second masking member formed to correspond to the scribe line formed between the light-emitting devices, the second masking member being extended to regions corresponding to the electrode pads formed on the light-emitting devices.

9. The method of claim 6, wherein the printing region comprises one opening entirely formed in the printing region and third masking members formed to correspond to electrode pads formed on the light-emitting devices.

10. The method of claim 1, further comprising:

after the phosphor layer is formed, removing the wafer from the carrier film; and

dicing the plurality of light-emitting devices formed on the wafer.

11. The method of claim 10, wherein the carrier film comprises a base film and a cohesive layer formed on the base film.

12. The method of claim 11, wherein the cohesive layer comprises a photosensitive adhesive (PSA) that may be hardened by UV light and the base film has permeability for UV light.

13. The method of claim 12, wherein the removing of the wafer from the carrier film comprises hardening the cohesive layer by irradiating UV light from the lower side of the carrier film and removing the wafer from the hardened cohesive layer.

14. A method of manufacturing a light-emitting device, the method comprising:

forming a plurality of light-emitting devices on a first main surface of a wafer;

after forming the plurality of light emitting devices on the wafer, thinning the wafer by removing material from a second main surface of the wafer, wherein the second main surface opposes the first main surface;

separating the plurality of light-emitting devices formed on the wafer through dicing;

arranging the separated light-emitting devices on a carrier film so that the second main surface of the wafer faces the carrier film; and

forming a phosphor layer on an emission surface of the plurality of light-emitting devices arranged on the carrier film, wherein the phosphor layer faces and overlies the first main surface of the wafer,

wherein the forming of the phosphor layer comprises;

disposing the carrier film, on which the light-emitting devices are arranged, on a vacuum table;

closely adhering and fixing the carrier film on the vacuum table by vacuum suction pressure;

coating a phosphor paste on the light-emitting devices; and

forming the phosphor layer by hardening the phosphor paste, and

wherein the vacuum table has a stepped structure, in which a center portion thereof protrudes to be higher than peripheral portions thereof.