Semiconductor device and manufacturing method thereof

• US 8,796,069 B2
• Filed: 02/03/2010
• Issued: 08/05/2014
• Est. Priority Date: 09/29/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo, Honda, Tatsuya, Sone, Norihito
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US12/699,240
• Publication Number:
  US 20100136743A1
• Time in Patent Office: 1,644 Days
• Field of Search: 438/799, 438/104, 257/E21.349, 257/E21.471, 257/E21.129, 257/E21.475, 257/E21.347
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Claims

1. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate;

forming a semiconductor film comprising an oxide semiconductor over the substrate; and

heating the gate electrode and the oxide semiconductor by irradiation of light to increase crystallinity in the oxide semiconductor,

wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween, and

wherein the oxide semiconductor is In—

Ga—

Zn—

O based oxide semiconductor,

wherein the semiconductor film comprises a first region and a second region,

wherein the gate electrode is closer to the first region than the second region, and

wherein a crystallinity of the first region is higher than a crystallinity of the second region.

2. A manufacturing method of a semiconductor device according to claim 1, wherein the semiconductor film is formed after the step of forming the gate electrode.

3. A manufacturing method of a semiconductor device according to claim 1, wherein the oxide semiconductor comprises amorphous state.

4. A manufacturing method of a semiconductor device according to claim 1,

wherein the In—

Ga—

Zn—

O based oxide semiconductor is amorphous.

5. A manufacturing method of a semiconductor device according to claim 1, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium, and niobium.

6. A manufacturing method of a semiconductor device according to claim 1, wherein the irradiation of light is performed by rapid thermal annealing.

7. A manufacturing method of a semiconductor device according to claim 1, wherein the light is laser light.

8. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate;

forming a wiring over the substrate;

forming a semiconductor film comprising an oxide semiconductor over the substrate; and

heating the gate electrode and the oxide semiconductor by irradiation of light to increase crystallinity in the oxide semiconductor,

wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween,

wherein the insulating film has single layer or multiple layer,

wherein the oxide semiconductor is In—

Ga—

Zn—

O based oxide semiconductor,

wherein the semiconductor film comprises a first region and a second region,

wherein the gate electrode is closer to the first region than the second region, and

wherein a crystallinity of the first region is higher than a crystallinity of the second region.

9. A manufacturing method of a semiconductor device according to claim 8, wherein the semiconductor film is formed after the step of forming the gate electrode.

10. A manufacturing method of a semiconductor device according to claim 8, wherein the insulating film comprises silicon oxide or silicon nitride.

11. A manufacturing method of a semiconductor device according to claim 8, wherein the insulating film is formed by a sputtering method.

12. A manufacturing method of a semiconductor device according to claim 8, wherein the insulating film comprises a material selected from the group consisting of alumina, aluminum nitride, titanium oxide, zirconia, lithium oxide, potassium oxide, sodium oxide, indium oxide, yttrium oxide, and calcium zirconate.

13. A manufacturing method of a semiconductor device according to claim 8, wherein the heating is performed in an atmosphere comprising oxygen.

14. A manufacturing method of a semiconductor device according to claim 8, wherein the oxide semiconductor comprises an amorphous state, a polycrystalline state, or a microcrystalline state in which both amorphous and polycrystalline states exist.

15. A manufacturing method of a semiconductor device according to claim 8, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, tungsten, titanium, molybdenum, chromium, and niobium.

16. A manufacturing method of a semiconductor device according to claim 8, wherein the wiring comprises a metal selected from the group consisting of aluminum (Al), tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), copper (Cu), chromium (Cr), cobalt (Co), nickel (Ni), platinum (Pt), titanium (Ti), and neodymium (Nd), alloy of the metal, or a nitride of the metal.

17. A manufacturing method of a semiconductor device according to claim 8,

wherein the insulating film includes a first layer and a second layer over the first layer,

wherein the first layer comprises one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide, and

wherein the second layer comprises one selected from the group consisting of alumina and aluminum nitride.

18. A manufacturing method of a semiconductor device according to claim 8, wherein the irradiation of light is performed by lamp rapid thermal annealing.

19. A manufacturing method of a semiconductor device according to claim 8, wherein the heating by the irradiation of light is performed at 250°

C. to 570°

C.

20. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate;

forming a semiconductor film comprising an oxide semiconductor over the substrate, wherein the semiconductor film has a thickness of 25 to 200 nm;

forming a wiring over the substrate; and

heating the gate electrode and the oxide semiconductor by irradiation of light to increase crystallinity in the oxide semiconductor,

wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween,

wherein the oxide semiconductor is In—

Ga—

Zn—

O based oxide semiconductor,

wherein the semiconductor film comprises a first region and a second region,

wherein the gate electrode is closer to the first region than the second region, and

wherein a crystallinity of the first region is higher than a crystallinity of the second region.

21. A manufacturing method of a semiconductor device according to claim 20, wherein the semiconductor film is formed after the step of forming the gate electrode.

22. A manufacturing method of a semiconductor device according to claim 20, wherein the oxide semiconductor is formed by a sputtering method.

23. A manufacturing method of a semiconductor device according to claim 20, wherein the oxide semiconductor comprises an amorphous state, a polycrystalline state, or a microcrystalline state in which both amorphous and polycrystalline states exist.

24. A manufacturing method of a semiconductor device according to claim 20, wherein the gate electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), platinum (Pt), titanium (Ti), and neodymium (Nd), alloy of the metal, or a nitride of the metal.

25. A manufacturing method of a semiconductor device according to claim 20, wherein the wiring comprises a metal selected from the group consisting of aluminum (Al), tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), copper (Cu), chromium (Cr), cobalt (Co), nickel (Ni), platinum (Pt), titanium (Ti), and neodymium (Nd), alloy of the metal, or a nitride of the metal.

26. A manufacturing method of a semiconductor device according to claim 20, wherein the heating by the irradiation of light is performed at 250°

C. to 570°

C.

27. A manufacturing method of a semiconductor device according to claim 20, wherein the semiconductor film comprising the oxide semiconductor comprises a portion of a region which is crystallized, and wherein the region overlaps with the gate electrode.

28. A manufacturing method of a semiconductor device according to claim 20,

wherein the heating is performed by rapid thermal annealing and,

wherein the rapid thermal annealing is performed in an atmosphere comprising oxygen.

29. A manufacturing method of a semiconductor device according to claim 20, wherein the light is laser light.

30. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode over a substrate;

forming a semiconductor film comprising an oxide semiconductor over the substrate; and

heating the gate electrode at 250°

C. to 570°

C. to improve crystallinity of a channel region of the semiconductor film,

wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween,

wherein the oxide semiconductor is In—

Ga—

Zn—

O based oxide semiconductor,

wherein the semiconductor film comprises a first region and a second region,

wherein the gate electrode is closer to the first region than the second region, and

wherein a crystallinity of the first region is higher than a crystallinity of the second region.

31. A manufacturing method of a semiconductor device according to claim 30, wherein the semiconductor film is formed after the step of forming the gate electrode.

32. A manufacturing method of a semiconductor device according to claim 30, wherein the gate electrode comprises a metal selected from the group consisting of tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), platinum (Pt), titanium (Ti), and neodymium (Nd), alloy of the metal, or a nitride of the metal.

33. A manufacturing method of a semiconductor device according to claim 30, wherein the heating is performed by rapid thermal annealing.