Techniques for bonding substrates using an intermediate layer
First Claim
Patent Images
1. A method comprising:
- depositing a thin film on a first surface of a first substrate;
moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces;
generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength; and
directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region, wherein directing the EM radiation through one of the first and second substrates and onto the region of the thin film until the first and second substrates are fused in the region does not cause the first substrate or the second substrate to melt or flow.
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Abstract
A method includes depositing a thin film on a first surface of a first substrate and moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces. The method further includes generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength. Additionally, the method includes directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region.
51 Citations
37 Claims
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1. A method comprising:
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depositing a thin film on a first surface of a first substrate; moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces; generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength; and directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region, wherein directing the EM radiation through one of the first and second substrates and onto the region of the thin film until the first and second substrates are fused in the region does not cause the first substrate or the second substrate to melt or flow. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method comprising:
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depositing a thin film on a first surface of a first wafer; moving a second surface of a second wafer into contact with the thin film such that the thin film is located between the first and second surfaces, wherein the first and second wafers at least partially define a plurality of cavities; generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength; and directing the EM radiation through one of the first and second wafers and onto a region of the thin film until the first and second wafers are fused in the region, wherein directing the EM radiation through one of the first and second wafers and onto a region of the thin film until the first and second wafers are fused in the region does not cause the first wafer or the second wafer to melt or flow. - View Dependent Claims (20, 21, 22, 23)
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24. A method comprising:
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forming a stack of N substrates, wherein at least one of a plurality of intermediate layers is disposed between each of the N substrate; generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that each of the plurality of intermediate layers absorbs EM radiation at the first wavelength; and directing the generated EM radiation through the stack of N substrates and the plurality of intermediate layers until each of the N substrates are fused to another one of the N substrates, wherein N is an integer greater than 2, wherein directing the generated EM radiation through the stack of N substrates and the plurality of intermediate layers until each of the N substrates are fused to another one of the N substrates does not cause any of the N substrates to melt or flow. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A method comprising:
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depositing an intermediate layer on a first surface of a first substrate; disposing a second surface of a second substrate into contact with the intermediate layer such that the intermediate layer is located between the first and second surfaces; generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the intermediate layer absorbs EM radiation at the first wavelength; and directing the EM radiation through one of the first and second substrates and onto a localized region of the intermediate layer until the first and second substrates are fused, wherein directing the EM radiation through one of the first and second substrates causes melting only in the localized region of the intermediate layer and the first or second substrates without melting of the first substrate or the second substrate outside the localized region. - View Dependent Claims (32, 33, 34, 35, 36, 37)
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Specification