Method for forming tantalum nitride film
First Claim
1. A method for forming a tantalum nitride film comprising the steps:
- using a composite type electrical connection film-forming apparatus equipped with a film-forming section comprising;
a film-forming chamber,a sputtering device, andan electrical connection film-forming chamber;
simultaneously introducing a raw gas comprisinga coordination compound comprising an elemental tantalum (Ta) having a coordinated ligand representable by the general formula;
N═
(R, R′
), andNH3 gasinto a film-forming chamber;
wherein R and R′
may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms,reducing the raw gas with NH3 gas and forming a reduced compound film on a substrate to thus partially remove the R or R′
groups bonded to the N atoms in the reduced compound film;
then introducing a hydrogen atom-containing gas without the raw gas into the chamber;
reacting the hydrogen atom-containing gas with the reduced compound film to form a tantalum nitride film rich in tantalum atoms;
implanting tantalum particles into the resulting tantalum nitride film according to a sputtering technique which makes use of a target containing tantalum as a principal constituent, while controlling a DC power and an RF power in such a manner that the DC power is set at a level of not more than 5 kW and the RF power is set at a value ranging from 400 to 800 W; and
forming an electrical connection-film, in the electrical connection film-forming chamber, on the tantalum nitride film thus obtained.
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Abstract
A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
11 Citations
7 Claims
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1. A method for forming a tantalum nitride film comprising the steps:
-
using a composite type electrical connection film-forming apparatus equipped with a film-forming section comprising; a film-forming chamber, a sputtering device, and an electrical connection film-forming chamber; simultaneously introducing a raw gas comprising a coordination compound comprising an elemental tantalum (Ta) having a coordinated ligand representable by the general formula;
N═
(R, R′
), andNH3 gas into a film-forming chamber; wherein R and R′
may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms,reducing the raw gas with NH3 gas and forming a reduced compound film on a substrate to thus partially remove the R or R′
groups bonded to the N atoms in the reduced compound film;then introducing a hydrogen atom-containing gas without the raw gas into the chamber; reacting the hydrogen atom-containing gas with the reduced compound film to form a tantalum nitride film rich in tantalum atoms; implanting tantalum particles into the resulting tantalum nitride film according to a sputtering technique which makes use of a target containing tantalum as a principal constituent, while controlling a DC power and an RF power in such a manner that the DC power is set at a level of not more than 5 kW and the RF power is set at a value ranging from 400 to 800 W; and forming an electrical connection-film, in the electrical connection film-forming chamber, on the tantalum nitride film thus obtained. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification