Methods of fabricating substrates
First Claim
1. A method of fabricating a substrate, comprising:
- forming spaced first features over a substrate, the spaced first features having elevationally coincident bases;
depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features;
depositing a first material over the altered material, the first material being of some different composition from that of the altered material and having an elevationally innermost base that is elevationally coincident with the bases of the spaced first features;
etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material;
after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and
processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
8 Assignments
0 Petitions
Accused Products
Abstract
A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.
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Citations
35 Claims
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1. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate, the spaced first features having elevationally coincident bases; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features; depositing a first material over the altered material, the first material being of some different composition from that of the altered material and having an elevationally innermost base that is elevationally coincident with the bases of the spaced first features; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features; depositing a first material over the altered material, the first material being of some different composition from that of the altered material and the same composition as that of the spaced first features; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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17. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features, the alterable material having a non-planar outermost surface, and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features; depositing a first material over the altered material, the first material being of some different composition from that of the altered material; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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18. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features, the altering occurring during deposition of the alterable material; depositing a first material over the altered material, the first material being of some different composition from that of the altered material; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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19. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features, the altering not occurring until after completion of the deposition of the alterable material; depositing a first material over the altered material, the first material being of some different composition from that of the altered material; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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20. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features, the altering alters a portion of the alterable material adjacent each of the spaced first features to form the altered material while leaving portions of the alterable material distal the spaced first features unaltered; depositing a first material over the altered material, the first material being of some different composition from that of the altered material, etching the distal portions away selectively relative to the altered material prior to the depositing of the first material; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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21. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features, the spaced first features comprising photoresist and the alterable material comprising one or more inorganic components dispersed in an organic composition that is cross-linkable upon exposure to acid, the one or more inorganic components including metal; depositing a first material over the altered material, the first material being of some different composition from that of the altered material; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features. - View Dependent Claims (22)
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23. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features; depositing a first material over the altered material, the first material being of some different composition from that of the altered material; etching the first material to expose the altered material and forming spaced second features comprising the first material on sidewalls of the altered material; after forming the spaced second features, etching the altered material from between the spaced second features and the spaced first features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced second features, the mask pattern having pitch of about one third that of the spaced first features.
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24. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; forming anisotropically etched spacers on sidewalls of the spaced first features; depositing an alterable material over the anisotropically etched spacers and altering the alterable material with material from the anisotropically etched spacers to form altered material on a sidewall of each of the anisotropically etched spacers; after the altering, removing the anisotropically etched spacers from the substrate and forming spaced third features comprising the altered material; and after the removing of the anisotropically etched spacers from the substrate, processing the substrate through a mask pattern comprising the spaced first features and the spaced third features. - View Dependent Claims (25, 26, 27, 28)
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29. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing a first alterable material over the spaced first features and altering the first alterable material with material from the spaced first features to form first altered material on sidewalls of the spaced first features; forming spaced second features comprising the first altered material and the spaced first features; depositing a second alterable material over the spaced second features and altering the second alterable material with the first altered material from the spaced second features to form second altered material on sidewalls of the spaced second features; forming spaced third features comprising the second altered material; etching the first altered material from between the spaced first features and the spaced third features; and processing the substrate through a mask pattern comprising the spaced first features and the spaced third features. - View Dependent Claims (30, 31, 32, 33)
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34. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing a first material over the spaced first features which is of some different composition from that of the spaced first features, the first material being deposited to a thickness which is less than that of the spaced first features; depositing a second material over the first material, the second material being of some different composition from that of the first material; etching the second material to expose the first material and forming two spaced second features between adjacent spaced first features, the second features being spaced from the first features at least by first material received therebetween, the spaced second features comprising the first material elevationally under an elevationally innermost base of the second material; etching the first material from between the spaced first features and the spaced second features; after the etching of the first material, laterally trimming width of the first features; and after the laterally trimming, processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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35. A method of fabricating a substrate, comprising:
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forming spaced first features over a substrate; depositing a first material over the spaced first features which is of some different composition from that of the spaced first features; depositing a second material over the first material, the second material being of some different composition from that of the first material; etching the second material to expose the first material and forming two spaced second features between adjacent spaced first features, the second features being spaced from the first features at least by first material received therebetween, the spaced second features comprising the first material elevationally under an elevationally innermost base of the second material; etching the first material from between the spaced first features and the spaced second features; after the etching of the first material, laterally trimming width of the first features, the second features having substantially uniform maximum width, the laterally trimming producing a substantially uniform maximum first feature width that is substantially equal to the substantially uniform maximum width of the second features; and after the laterally trimming, processing the substrate through a mask pattern comprising the spaced first features and the spaced second features.
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Specification