MOS devices with strain buffer layer and methods of forming the same

• US 8,796,666 B1
• Filed: 04/26/2013
• Issued: 08/05/2014
• Est. Priority Date: 04/26/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Huang, Yu-Lien, Lee, Tung Ying, Chen, Chung-Hsien, Liu, Chi-Wen
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US13/871,739
• Time in Patent Office: 466 Days
• Field of Search: 257/18, 257/19, 257/E29.193, 438/285, 438/938
• US Class Current: 257/18
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A device includes a substrate, insulation regions extending into the substrate, and a semiconductor fin higher than top surfaces of the insulation regions. The semiconductor fin has a first lattice constant. A semiconductor region includes sidewall portions on opposite sides of the semiconductor fin, and a top portion over the semiconductor fin. The semiconductor region has a second lattice constant different from the first lattice constant. A strain buffer layer is between and contacting the semiconductor fin and the semiconductor region. The strain buffer layer includes an oxide.

Claims

1. A device comprising:

a substrate;

insulation regions extending into the substrate;

a semiconductor fin higher than top surfaces of the insulation regions, wherein the semiconductor fin has a first lattice constant;

a semiconductor region having a second lattice constant different from the first lattice constant, wherein the semiconductor region comprises;

sidewall portions on opposite sides of the semiconductor fin; and

a top portion over the semiconductor fin; and

a strain buffer layer between and contacting the semiconductor fin and the semiconductor region, wherein the strain buffer layer comprises an oxide.

2. The device of claim 1, wherein the strain buffer layer comprises portions separating the sidewall portions of the semiconductor region from sidewalls of the semiconductor fin.

3. The device of claim 2, wherein the strain buffer layer fully separates the sidewall portions of the semiconductor region from sidewalls of the semiconductor fin.

4. The device of claim 1, wherein the strain buffer layer comprises sidewall portions on opposite sides of the semiconductor fin, and a top portion overlying the semiconductor fin, and wherein the strain buffer layer fully separates the semiconductor region from the semiconductor fin.

5. The device of claim 1, wherein the first lattice constant is greater than the second lattice constant.

6. The device of claim 1, wherein the first lattice constant is smaller than the second lattice constant.

7. The device of claim 1, wherein the semiconductor region forms a channel region of a Fin Field-Effect Transistor (FinFET), and wherein the FinFET further comprises:

a gate dielectric comprising sidewall portions on opposite sides of the semiconductor region, and a top portion over the semiconductor region; and

a gate electrode over the gate dielectric.

8. A device comprising:

a first semiconductor region, wherein the first semiconductor region has a first lattice constant;

a second semiconductor region over the first semiconductor region, wherein the second semiconductor region has a second lattice constant different from the first lattice constant;

a strain buffer layer between and contacting the first semiconductor region and the second semiconductor region, wherein the strain buffer layer comprises an oxide of the first semiconductor region and an oxide of the second semiconductor region;

a gate dielectric overlying the second semiconductor region; and

a gate electrode overlying the first semiconductor region.

9. The device of claim 8, wherein each of the first semiconductor region and the second semiconductor region comprises a material selected from the group consisting essentially of silicon, germanium, and combinations thereof.

10. The device of claim 8, wherein the strain buffer layer fully separates the first semiconductor region from the second semiconductor region.

11. The device of claim 8, wherein in a region overlapped by the gate dielectric, the first semiconductor region is in contact with the second semiconductor region, and wherein the strain buffer layer comprises portions on opposite sides of the region.

12. The device of claim 8, wherein the strain buffer layer, the gate dielectric, and the gate electrode form a Fin Field-Effect Transistor (FinFET), with the strain buffer layer forming a channel of the FinFET.

13. The device of claim 12, wherein the strain buffer layer and the second semiconductor region extends on opposite sides of, and level with, the first semiconductor region.

14. The device of claim 8, wherein the strain buffer layer, the gate dielectric, and the gate electrode form a planar transistor.

15. A method comprising:

performing an epitaxy to grow a first semiconductor region on a second semiconductor region, wherein the first semiconductor region has a first lattice constant different from a second lattice constant of the second semiconductor region; and

performing an oxidation process to form an oxide in an interface region between the first semiconductor region and the second semiconductor region, wherein in the oxidation process, portions of the first semiconductor region and the second semiconductor region in an interface region between the first semiconductor region and the second semiconductor region are oxidized to form an oxide region, and wherein a portion of the first semiconductor region remains, and is separated from the second semiconductor region by the oxide region.

16. The method of claim 15 further comprising:

forming a gate dielectric over the remaining portion of the first semiconductor region; and

forming a gate electrode over the gate dielectric.

17. The method of claim 15, wherein after the oxidation process, the oxide region fully separates the first semiconductor region from the second semiconductor region.

18. The method of claim 15, wherein after the oxidation process, the oxide region partially separates the first semiconductor region from the second semiconductor region.

19. The method of claim 15, wherein the oxidation process comprises annealing the first semiconductor region and the second semiconductor region in an oxygen-containing environment.

20. The method of claim 15, wherein the oxidation process comprises exposing the first semiconductor region and the second semiconductor region to an oxygen-containing plasma.