×

Semiconductor device and method for manufacturing the same

  • US 8,796,681 B2
  • Filed: 09/04/2012
  • Issued: 08/05/2014
  • Est. Priority Date: 09/07/2011
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a semiconductor device, comprising the steps of:

  • performing polishing treatment on a surface of an oxide insulating layer;

    forming an oxide semiconductor film over the oxide insulating layer after the polishing treatment;

    introducing oxygen into the oxide semiconductor film after forming the oxide semiconductor film;

    forming a gate insulating film over the oxide semiconductor film;

    forming a gate electrode layer over the gate insulating film, wherein the gate electrode layer overlaps with the oxide semiconductor film;

    selectively introducing a dopant to the oxide semiconductor film using the gate electrode layer as a mask; and

    forming an insulating layer over the oxide semiconductor film and the gate electrode layer, wherein the insulating layer comprises an aluminum oxide film.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×