Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

• US 8,796,714 B2
• Filed: 03/25/2010
• Issued: 08/05/2014
• Est. Priority Date: 04/28/2009
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Grolier, Vincent, Ahlstedt, Magnus, Ahlstedt, Mikael, Eissler, Dieter
• Primary Examiner(s): Jung, Michael
• Assistant Examiner(s): Chang, Jay C
• Application Number:
  US13/263,789
• Publication Number:
  US 20120112226A1
• Time in Patent Office: 1,594 Days
• Field of Search: 257/100, 257/432, 257/98, 257/431, 257/99, 257/433, 257/436, 257/435, 257/E31.117, 257/E33.059
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Claims

1. A light-emitting diode comprising:

a semiconductor body comprising an active region that produces radiation;

a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body comprising a luminescence conversion material consisting of a ceramic luminescence conversion material;

a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side; and

two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body,

wherein at least one channel is introduced from at least one of the contact layers into the semiconductor body, which channel is

     1) filled with an electrically conductive material connected electrically conductively to the semiconductor body and one of the contact layers and

     2) passes through the carrier body from an upper side of the carrier body to an underside of the carrier body and extends into a region of the semiconductor body containing semiconductor material.

2. The light-emitting diode according to claim 1, wherein the radiation produced in the active region during operation leaves the light-emitting diode only through the carrier body.

3. The light-emitting diode according to claim 1, wherein at least one side face of the carrier body ends flush with at least one side face of the semiconductor body.

4. The light-emitting diode according to claim 1, wherein a covering layer completely covers at least one side face of the semiconductor body.

5. The light-emitting diode according to claim 4, wherein the covering layer covers the carrier body and/or the mirror layer at the side.

6. The light-emitting diode according to claim 1, wherein the carrier body consists of a ceramic luminescence conversion material.

7. The light-emitting diode according to claim 1, wherein the contact layer to which the at least one channel is connected is arranged on a side of the carrier body remote from the semiconductor body.