Method and structure of monolithically integrated pressure sensor using IC foundry-compatible processes

• US 8,796,746 B2
• Filed: 07/07/2009
• Issued: 08/05/2014
• Est. Priority Date: 07/08/2008
• Status: Active Grant

• Current Assignee: Movella Incorporated (Movella Holdings, Inc.)
• Original Assignee: mCube, Inc.
• Inventors: Yang, Xiao (Charles)
• Primary Examiner(s): Such, Matthew W
• Assistant Examiner(s): Harrison, Monica D
• Application Number:
  US12/499,027
• Publication Number:
  US 20100171153A1
• Time in Patent Office: 1,855 Days
• Field of Search: 257/254, 257/E21.211, 257/E29.324
• US Class Current: 257/254
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2201/0192 by cleaving the carrier wafer
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

Claims

1. A pressure sensing device comprising:

a substrate having a surface region;

a CMOS integrated circuit device layer overlying the surface region of the substrate;

a diaphragm device having one or more surface regions directly overlying the CMOS integrated circuit device layer; and

at least one or more spring devices spatially disposed within a vicinity of the one or more surface regions of the diaphragm device, each of the spring devices being operably coupled to the one or more surface regions of the diaphragm device.

2. The device of claim 1 wherein the one or more spring devices comprise one or more folded spring devices.

3. The device of claim 1 wherein the one or more spring devices are integrally formed within the one or more surface regions of the diaphragm device.

4. The device of claim 1 wherein the one or more surface regions has a uniformity of 5 percent and less variation.

5. The device of claim 1 wherein the diaphragm device is characterized by a thickness of about one micron and less.

6. The device of claim 1 wherein the diaphragm device is made of a semiconductor material, a metal material, or a dielectric material or any combination of these.

7. The device of claim 1 wherein the one or more surface regions comprises an array being defined by N and M, where N and M are integers greater than 2.

8. The device of claim 1 wherein the one or more surface regions comprises at least one surface region disposed within a center region of the diaphragm and a plurality of surface regions disposed radially around the center region of the diaphragm.

9. The device of claim 1 further comprising one or more lower electrodes operably coupled to one or more of the surface regions.

10. The device of claim 9 further comprising one or more upper electrodes operably coupled to one or more of the surface regions to form one or more variable capacitor structures.

11. The device of claim 9 wherein each of the one or more lower electrodes comprises one or more metal regions coupled to one or more of CMOS integrated circuits in the CMOS integrated circuit device layer.

12. The device of claim 9 wherein each of the one or more lower electrodes comprises one or more metal regions overlying an upper dielectric layer provided on the CMOS integrated circuit device layer.

13. The device of claim 9 further comprising one or more vent regions provided adjacent to one or more of the lower electrodes, the one or more of the vent regions extending to a cavity region within a portion of the substrate.

14. The device of claim 1 further comprising a housing member provided overlying the diaphragm device to form a cavity region between the housing member and the diaphragm device, the housing member comprising one or more fluid openings to allow fluid to move between the cavity and a region outside of the housing member.

15. A pressure sensing device comprising:

a substrate having a surface region;

a CMOS integrated circuit device layer overlying the surface region of the substrate;

a diaphragm device having at least a first diaphragm surface region facing the CMOS integrated device layer and a second diaphragm surface region opposite the first surface region;

at least one or more spring devices spatially disposed within a vicinity of the first diaphragm surface region of the diaphragm device, each of the folded spring devices being operably coupled to the first diaphragm surface region of the diaphragm device;

two or more electrode devices operably coupled to the first diaphragm surface region;

at least one fluid channel formed between the two or more electrode devices, at least one of the fluid channels being in communication with the first diaphragm surface region of the diaphragm device; and

a housing member provided overlying the diaphragm device to form a cavity region between the housing member and the diaphragm device, the housing member comprising one or more first fluid openings to allow fluid to move between the cavity and a first region outside of the housing member, the one or more fluid openings being in communication with the second diaphragm surface region of the diaphragm.

16. A pressure sensing device comprising:

a substrate having a surface region and a bulk region;

a CMOS integrated circuit device layer overlying the surface region of the substrate;

a diaphragm device having a first surface region facing and overlying the CMOS integrated circuit device layer and a second surface region opposite the first surface region;

at least one or more folded spring devices spatially disposed within a vicinity of the first substrate region of the diaphragm device, each of the folded spring devices being operably coupled to the first surface region of the diaphragm device;

two or more electrode devices operably coupled to the first surface region;

a first cavity region provided between the first surface region and the CMOS integrated circuit device layer, the first cavity region being substantially sealed and maintaining a predetermined environment; and

a housing member provided overlying the second surface region of the diaphragm device to form a second cavity region between the housing member and the diaphragm device, the housing member comprising one or more fluid openings to allow fluid to move between the second cavity and a region outside of the housing member.

17. A pressure sensing device comprising:

a substrate having a surface region;

a CMOS integrated circuit device layer overlying the surface region of the substrate, the CMOS integrated circuit device layer having an embedded fluid channel; and

a diaphragm device having one or more-surface regions overlying the CMOS integrated circuit device layer, the diaphragm device being formed from a portion of a single crystal silicon material; and

a first cavity region provided between the diaphragm device and the CMOS integrated circuit device layer, the embedded fluid channel being in communication with the first cavity region.

18. The device of claim 17 further comprising a housing overlying the diaphragm device and forming a second cavity region between the housing and the diaphragm device.

19. The device of claim 17 further comprising a housing overlying the diaphragm device and forming a second cavity region between the housing and the diaphragm device;

and wherein one or more portions of the housing form one or more sensing electrode devices, and wherein the housing forms a first chamber and a second chamber, the first chamber encapsulating the diaphragm device and the second cavity region, the second chamber being in communication with the embedded fluid channel.

20. The device of claim 17 further comprising a housing overlying the diaphragm device and forming a second cavity region between the housing and the diaphragm device, the housing comprising an outer region and an inner region;

and wherein one or more inner portions of the inner region of the housing form one or more sensing electrode devices, and wherein the housing forms a first chamber and a second chamber, the housing member having a first fluid inlet and a second fluid inlet, the first fluid inlet allowing fluid to move between the first chamber and a first region outside of the housing member, the first chamber encapsulating the diaphragm device and the second cavity region, the second chamber being in communication with the embedded fluid channel, the second fluid inlet allowing fluid to move between the second chamber and a second region outside of the housing member.

21. The device of claim 17 wherein the single crystal silicon material is provided from a silicon on insulator substrate (Sal).

22. The device of claim 17 wherein the single crystal silicon material is provided from a cleaved portion of single crystal silicon material.

23. A pressure sensing device comprising:

a substrate having a surface region;

a CMOS integrated circuit device layer overlying the surface region of the substrate, the CMOS integrated circuit device layer having a CMOS surface region;

an oxide layer overlying the CMOS surface region, the oxide layer having an oxide surface region, the oxide layer having an embedded fluid channel;

a diaphragm device overlying the oxide surface region, the diaphragm device having a first diaphragm surface region facing the CMOS integrated surface region and a second diaphragm surface region opposite the first diaphragm surface;

at least one or more folded spring devices spatially disposed within a vicinity of the one or more surface regions of the diaphragm device, each of the folded spring devices being operably coupled to the one or more surface regions of the diaphragm device and one or more portions of the surface region of the substrate, each of the folded spring devices characterized as a corrugated structure coupled to the substrate; and

a housing member provided overlying the diaphragm device and the CMOS integrated device layer to form a first chamber encapsulating the diaphragm device and a second chamber within a vicinity of the first chamber, the housing member having a first fluid inlet and a second fluid inlet, the first fluid inlet allowing fluid to move between the first chamber and a first region outside of the housing member, the first fluid inlet being in communication with the second diaphragm surface region, the second fluid inlet allowing fluid to move between the second chamber and a second region outside of the housing member, the second fluid inlet being in communication with the first diaphragm surface region via the embedded fluid channel of the oxide layer.

24. The device of claim 23 wherein each of the one or more folded spring devices comprises a horizontal compliance and a vertical compliance.

25. A pressure sensing device comprising:

a substrate having a surface region and a bulk region;

a CMOS integrated circuit device layer overlying the surface region of the substrate;

a diaphragm device having one or more surface regions overlying the CMOS integrated circuit device layer, the diaphragm device being formed from a portion of a single crystal silicon material, the diaphragm device having a plurality of spring devices spatially disposed within a vicinity of the one or more surface regions of the diaphragm device, each of the plurality of spring devices being operably coupled to at least one of the one or more surface regions of the diaphragm device, the plurality of spring devices being configured radially around a center portion of the diaphragm device; and

one or more lower electrodes operably coupled to one or more of the surface regions; and

one or more upper electrodes operably coupled to the one or more of the surface regions to form one or more variable capacitor structures.