Determining a structural parameter and correcting an asymmetry property

• US 8,797,554 B2
• Filed: 05/10/2013
• Issued: 08/05/2014
• Est. Priority Date: 05/21/2012
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Straaijer, Alexander
• Primary Examiner(s): STAFIRA, MICHAEL PATRICK
• Application Number:
  US13/891,410
• Publication Number:
  US 20130308142A1
• Time in Patent Office: 452 Days
• US Class Current: 356/625
• CPC Class Codes: G01B 11/02 for measuring length, width or thickness G01B11/08 takes precedence
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

A method of determining a structural parameter related to process-induced asymmetry, the method including: illuminating a structure, having an asymmetry property and a sub-structure susceptible to process-induced asymmetry, with radiation with a plurality of illumination conditions, at a first location of a substrate, determining a difference between measured asymmetry properties of the structure obtained with each of the plurality of illumination conditions, calculating a differential dependence of a difference between modeled asymmetry properties simulated for illumination by each of the plurality of illumination conditions on a structural parameter representing process-induced asymmetry of the sub-structure, and determining a value of the structural parameter using the determined difference and the calculated differential dependence.

Claims

1. A method comprising:

illuminating a structure, having an asymmetry property and comprising a sub-structure susceptible to process-induced asymmetry, with radiation with a plurality of illumination conditions, at a first location of a substrate;

determining a difference between measured asymmetry properties of the structure obtained with each of the plurality of illumination conditions;

calculating a differential dependence of a difference between modeled asymmetry properties simulated for illumination by each of the plurality of illumination conditions on a structural parameter representing process-induced asymmetry of the sub-structure; and

determining a value of the structural parameter using the determined difference and the calculated differential dependence.

2. The method of claim 1, wherein the measured asymmetry properties are obtained by:

detecting radiation scattered from the structure, arising from the illumination at the first location;

selecting each of the plurality of illumination conditions; and

determining the measured asymmetry property for each selected illumination condition at the first location.

3. The method of claim 1, wherein the structure comprises an overlay target.

4. The method of claim 3, wherein the sub-structure comprises a bottom layer of an overlay target.

5. The method of claim 1, wherein the asymmetry property is overlay offset.

6. The method of claim 5, wherein the structural parameter is floor tilt.

7. The method of claim 5, wherein the structural parameter is side wall angle unbalance.

8. The method of claim 1, further comprising:

calculating a dependence of a modeled single-illumination-condition asymmetry property, simulated for illumination by a single illumination condition, on the structural parameter; and

using the determined structural parameter at the first location on the substrate and the calculated dependence of the modeled single-illumination-condition asymmetry property to correct a measured single-illumination-condition asymmetry property for process-induced asymmetry.

9. The method of claim 8, further comprising using a lithographic apparatus to form a pattern on the substrate to form the structure.

10. The method of claim 8, further comprising, prior to using the determined structural parameter:

illuminating a structure, having an asymmetry property and comprising a sub-structure susceptible to process-induced asymmetry, with radiation with at least one of a plurality of illumination conditions at a second location on the substrate;

detecting radiation of a selected illumination condition of the at least one of a plurality of illumination conditions scattered from the structure; and

determining the measured single-illumination-condition asymmetry property of the structure, using the detected radiation of the selected illumination condition.

11. The method of claim 10, wherein in using the determined structural parameter at the first location on the substrate comprises calculating a value of the structural parameter at the second substrate location derived from the determined value of the structural parameter at the first location on the substrate.

12. An apparatus comprising:

an illumination system configured to illuminate a structure, the structure having an asymmetry property and comprising a sub-structure susceptible to process-induced asymmetry, with radiation with a plurality of illumination conditions, at a first location of a substrate; and

a processor configured to;

determine a difference between measured asymmetry properties of the structure obtained with each of the plurality of illumination conditions;

calculate a differential dependence of a difference between modeled asymmetry properties simulated for illumination by each of the plurality of illumination conditions on a structural parameter representing process-induced asymmetry of the sub-structure; and

determine a value of the structural parameter using the determined difference and the calculated differential dependence.

13. The apparatus of claim 12, further comprising a detection system configured to detect radiation scattered from the structure, arising from the illumination at the first location, wherein the illumination system is configured to select each of the plurality of illumination conditions, and wherein the processor is configured to determine the measured asymmetry property for each selected illumination condition at the first location.

14. The apparatus of claim 12, wherein the structure comprises an overlay target.

15. The apparatus of claim 14, wherein the sub-structure comprises a bottom layer of an overlay target.

16. The apparatus of claim 12, wherein the asymmetry property is overlay offset.

17. The apparatus of claim 16, wherein the structural parameter is floor tilt.

18. The apparatus of claim 16, wherein the structural parameter is side wall angle unbalance.

19. The apparatus of claim 12, wherein the processor is further configured to:

calculate a dependence of a modeled single-illumination-condition asymmetry property, simulated for illumination by a single illumination condition, on the structural parameter; and

use the determined structural parameter at the first location on the substrate and the calculated dependence of the modeled single-illumination-condition asymmetry property to correct a measured single-illumination-condition asymmetry property for process-induced asymmetry.

20. The apparatus of claim 19, further comprising a detection system configured to detect radiation scattered from the structure, arising from the illumination at the first location, wherein the illumination system is configured to select each of the plurality of illumination conditions, and wherein the processor is configured to determine the measured asymmetry property for each selected illumination condition at the first location and wherein:

the illumination system is configured to illuminate a structure, having an asymmetry property and comprising a sub-structure susceptible to process-induced asymmetry, with radiation with at least one of a plurality of illumination conditions at a second location on the substrate;

the detection system is configured to detect radiation of a selected illumination condition of the at least one of a plurality of illumination conditions scattered from the structure; and

the processor is configured to determine the measured single-illumination-condition asymmetry property of the structure, using the detected radiation of the selected illumination condition.

21. The apparatus of claim 20, wherein the processor is further configured to use the determined structural parameter at the first location on the substrate by calculating a value of the structural parameter at the second substrate location derived from the determined value of the structural parameter at the first location on the substrate.

22. The apparatus of claim 12, further comprising:

a coater arranged to coat a substrate with a radiation sensitive layer;

a lithographic apparatus arranged to expose an image onto a radiation sensitive layer of the substrate coated by the coater; and

a developer arranged to develop an image exposed by the lithographic apparatus.

23. A lithographic apparatus comprising:

a projection system arranged to project a pattern image on to a substrate; and

an inspection apparatus comprising;

an illumination system configured to illuminate a structure, having an asymmetry property and comprising a sub-structure susceptible to process-induced asymmetry, with radiation with a plurality of illumination conditions, at a first location of a substrate; and

a processor configured to;

determine a difference between measured asymmetry properties of the structure obtained with each of the plurality of illumination conditions;

calculate a differential dependence of a difference between modeled asymmetry properties simulated for illumination by each of the plurality of illumination conditions on a structural parameter representing process-induced asymmetry of the sub-structure; and

determine a value of the structural parameter using the determined difference and the calculated differential dependence.