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Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

  • US 8,802,461 B2
  • Filed: 03/22/2011
  • Issued: 08/12/2014
  • Est. Priority Date: 03/22/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a lighting emitting device, comprising:

  • forming a light emitting structure;

    depositing a barrier material, a mirror material, and a bonding material on the light emitting structure, the bonding material containing nickel (Ni);

    placing the light emitting structure onto a silicon substrate with the nickel of the bonding material in direct contact with the silicon substrate; and

    bonding the light emitting structure and the silicon substrate via forming a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material.

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