Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

• US 8,802,461 B2
• Filed: 03/22/2011
• Issued: 08/12/2014
• Est. Priority Date: 03/22/2011
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Bernhardt, Michael J.
• Primary Examiner(s): Fan, Michele
• Application Number:
  US13/053,932
• Publication Number:
  US 20120241785A1
• Time in Patent Office: 1,239 Days
• Field of Search: 438/22, 438/26, 438/29, 438/39, 438/42, 438/455, 438/458, 257/E33.056, 257/E33.057, 257/99, 257/E33.06, 257/E33.061, 257/E33.062, 257/E33.063, 257/E33.066, 257/E33.067
• US Class Current: 438/26
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Claims

1. A method for manufacturing a lighting emitting device, comprising:

forming a light emitting structure;

depositing a barrier material, a mirror material, and a bonding material on the light emitting structure, the bonding material containing nickel (Ni);

placing the light emitting structure onto a silicon substrate with the nickel of the bonding material in direct contact with the silicon substrate; and

bonding the light emitting structure and the silicon substrate via forming a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material.

2. The method of claim 1 wherein bonding the light emitting structure and the silicon substrate includes annealing the light emitting structure and the silicon substrate.

3. The method of claim 1 wherein:

forming the light emitting structure includes forming N-type gallium nitride (GaN), GaN/indium gallium nitride (InGaN) multiple quantum wells, and P-type GaN on a substrate material in sequence and subsequently removing the substrate material from the N-type GaN;

the barrier material contains nickel (Ni);

the mirror material contains silver (Ag); and

annealing the light emitting structure and the silicon substrate includes;

heating the light emitting structure and the silicon substrate to a temperature from about 300°

C. to about 450°

C.; and

maintaining the temperature for a heating period of about 1 to 30 minutes under a bonding pressure of about 50 mPa to about 100 mPa.

4. The method of claim 1 wherein:

the barrier material contains nickel (Ni); and

the mirror material contains silver (Ag).

5. The method of claim 1 wherein:

the barrier material contains nickel (Ni);

the mirror material contains silver (Ag); and

annealing the light emitting structure and the silicon substrate includes forming the nickel silicide (NiSi) material at the interface between the silicon substrate and the bonding material without completely consuming the bonding material.

6. The method of claim 1 wherein:

the barrier material contains nickel (Ni);

the mirror material contains silver (Ag); and

annealing the light emitting structure and the silicon substrate includes forming the nickel silicide (NiSi) material at the interface between the silicon substrate and the bonding material without completely consuming the nickel (Ni) contained in the bonding material.

7. The method of claim 1 wherein:

the barrier material contains nickel (Ni);

the mirror material contains silver (Ag); and

annealing the light emitting structure and the silicon substrate includes;

forming the nickel silicide (NiSi) material at the interface between the silicon substrate and the bonding material; and

maintaining a thickness of the bonding material greater than about 30 Angstroms after forming the nickel silicide (NiSi) material.

8. The method of claim 1 wherein:

the barrier material contains nickel (Ni);

the mirror material contains silver (Ag); and

annealing the light emitting structure and the silicon substrate includes;

reacting a portion of the nickel (Ni) contained in the bonding material with the silicon (Si) contained in the silicon substrate to form the nickel silicide (NiSi) material; and

bonding the silicon substrate to the light emitting structure with the formed nickel silicide (NiSi) material.

9. A method for manufacturing a lighting emitting device, comprising:

forming a light emitting structure;

depositing a barrier material, a mirror material, and a nickel material on the light emitting structure, wherein the nickel material has a first surface;

placing the light emitting structure onto a carrier substrate, wherein the carrier substrate includes a silicon material having a second surface, and wherein the second surface of the silicon material is in direct contact with the first surface of nickel material; and

forming a nickel silicide (NiSi) material at an interface between the nickel material and the silicon material to bond the light emitting structure to the carrier substrate.

10. The method of claim 9 wherein the nickel material includes a nickel alloy.