Optical device processing method

• US 8,802,463 B2
• Filed: 06/04/2013
• Issued: 08/12/2014
• Est. Priority Date: 06/12/2012
• Status: Active Grant

• Current Assignee: Disco Corporation
• Original Assignee: Disco Corporation
• Inventors: Sekiya, Kazuma
• Primary Examiner(s): Roman, Angel
• Application Number:
  US13/909,333
• Publication Number:
  US 20130330855A1
• Time in Patent Office: 434 Days
• Field of Search: 438/33
• US Class Current: 438/27
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each optical device having electrodes formed on the front side. A processing method includes: forming a groove on a back side of the wafer along each division line so as to form a slightly remaining portion on the front side of the wafer along each division line; forming a reflective film on the back side of the wafer to thereby form the reflective film on at least side surfaces of the groove; grinding the back side of the wafer to thereby reduce the thickness of the wafer to a finished thickness; and cutting the slightly remaining portion along each division line to thereby divide the wafer into individual optical device chips.

Claims

1. An optical device processing method for processing an optical device wafer having a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each of the optical devices having electrodes formed on the front side, the optical device processing method comprising:

a groove forming step of forming a groove on a back side of the optical device wafer along each division line so as to form a slightly remaining portion on the front side of the optical device wafer along each division line;

a reflective film forming step of forming a reflective film on the back side of the optical device wafer after performing the groove forming step, thereby forming the reflective film on at least side surfaces of the groove;

a grinding step of grinding the back side of the optical device wafer after performing the reflective film forming step, thereby reducing the thickness of the optical device wafer to a finished thickness; and

a dividing step of cutting the slightly remaining portion along each division line after performing the grinding step, thereby dividing the optical device wafer into individual optical device chips.

2. The optical device processing method according to claim 1, further comprising:

a mounting step of flip-chip mounting each optical device chip on a substrate after performing the dividing step; and

a sealing step of sealing each optical device chip mounted on the substrate with a sealing member.

3. The optical device processing method according to claim 1, further comprising:

a sealing step of covering the back side of the optical device wafer with a sealing member after performing the grinding step and before performing the dividing step; and

a mounting step of flip-chip mounting each optical device chip on a substrate after performing the dividing step.