Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film over an insulating surface over a substrate;
forming a gate insulating film over the oxide semiconductor film;
forming a gate electrode over the gate insulating film;
forming a pair of oxynitride semiconductor regions by implanting an ion including nitrogen into the oxide semiconductor film with the gate electrode used as a mask;
forming a wiring connected to one of the pair of oxynitride semiconductor regions; and
heating the substrate with a substrate temperature higher than or equal to 150 °
C. and lower than or equal to 600 °
C. after forming the pair of oxynitride semiconductor regions.
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Accused Products
Abstract
A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
135 Citations
21 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over an insulating surface over a substrate; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode over the gate insulating film; forming a pair of oxynitride semiconductor regions by implanting an ion including nitrogen into the oxide semiconductor film with the gate electrode used as a mask; forming a wiring connected to one of the pair of oxynitride semiconductor regions; and heating the substrate with a substrate temperature higher than or equal to 150 °
C. and lower than or equal to 600 °
C. after forming the pair of oxynitride semiconductor regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over an insulating surface over a substrate; forming a gate insulating film covering the oxide semiconductor film; forming a conductive film over the gate insulating film; forming a gate electrode by processing the conductive film; forming a pair of oxynitride semiconductor regions in a region of the oxide semiconductor film, which does not overlap with the gate electrode, by implanting an ion including nitrogen into the oxide semiconductor film through the gate insulating film; forming a wiring connected to one of the pair of oxynitride semiconductor regions; and heating the substrate with a substrate temperature higher than or equal to 150 °
C. and lower than or equal to 600 °
C. after forming the pair of oxynitride semiconductor regions. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over an insulating surface over a substrate; forming a first insulating film covering the oxide semiconductor film; forming a conductive film over the first insulating film; forming a gate electrode and a gate insulating film from which a part of the oxide semiconductor film is exposed, by processing the conductive film and the first insulating film; forming a pair of oxynitride semiconductor regions in the part of the exposed oxide semiconductor film by implanting an ion including nitrogen into the oxide semiconductor film; forming a wiring connected to one of the pair of oxynitride semiconductor regions; and heating the substrate with a substrate temperature higher than or equal to 150 °
C. and lower than or equal to 600 °
C. after forming the pair of oxynitride semiconductor regions. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification