Imaging device having a radiation detecting structure sensitive to neutron radiation

• US 8,803,066 B2
• Filed: 07/24/2012
• Issued: 08/12/2014
• Est. Priority Date: 06/09/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies Batam PT (Infineon Technologies AG)
• Original Assignee: Spansion LLC (Infineon Technologies AG)
• Inventors: Hossain, Timothy Z., Clopton, Patrick Mark, Fullwood, Clayton, Posey, Dan E.
• Primary Examiner(s): LE, QUE TAN
• Application Number:
  US13/556,819
• Publication Number:
  US 20130032725A1
• Time in Patent Office: 749 Days
• Field of Search: 250/214.1, 250/239, 250/214.R, 250/238, 250/208.1, 250/207, 250/214.VT, 25037009-37014, 2503381-3384, 378/98.11, 378/98.12
• US Class Current: 250/214.1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00

Abstract

An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Claims

1. A device comprising:

a substrate; and

a radiation-detecting structure comprising;

an array of charge storage structures on the substrate; and

a neutron-reactive material overlying at least a first portion of the array of charge storage structures.

2. The device of claim 1, wherein the radiation-detecting structure comprises a memory array comprising the array of charge storage structures.

3. The device of claim 1, wherein each charge storage structure within the array of charge storage structures comprises a conductive charge storage layer.

4. The device of claim 1, wherein each charge storage structure within the array of charge storage structures comprises a non-conductive charge storage layer.

5. The device of claim 1, wherein each charge storage structure within the array of charge storage structures comprises a nitrogen-containing layer disposed between and in direct contact with an underlying dielectric layer and an overlying dielectric layer.

6. The device of claim 1, wherein the substrate is disposed within an interior space within a base of the device.

7. The device of claim 1, wherein the substrate has a diameter of at least about 10 cm.

8. The device of claim 1, wherein the substrate has an average thickness within a range between about 1 mm and about 5 mm.

9. The device of claim 1, further comprising a cover overlying the radiation-detecting structure.

10. The device of claim 9, wherein the cover is an interposer to provide electrical connections between the radiation-detecting structure and an external contact of the interposer.

11. The device of claim 1, further comprising a thermalizing material overlying at least a portion of the neutron-reactive material.

12. The device of claim 1, further comprising a second radiation-reactive material different from the neutron-reactive material overlying at least a second portion of the array of charge storage structures.

13. The device of claim 12, wherein the second portion corresponds to the first portion.

14. The device of claim 12, wherein the second portion is different than the first portion.

15. A system comprising:

a device comprising;

a substrate, and

a radiation-detecting structure comprising;

an array of charge storage structures on the substrate, and

a neutron-reactive material overlying at least a portion of the array of charge storage structures;

a charge storage controller in communication with the array of charge storage structures; and

a data buffer in communication with the array of charge storage structures.

16. A method of detecting a radiation event, the method comprising:

setting a charge at a plurality of charge storage structures of a device, the device comprising;

a substrate, and

a radiation-detecting structure comprising;

the plurality of charge storage structures on the substrate, and

a neutron-reactive material overlying at least a first portion of the plurality of charge storage structures;

applying a read voltage to a control gate associated with a charge storage structure of the plurality of charge storage structures; and

determining a conductive state of the control gate.

17. The method of claim 16, further comprising applying a read voltage to a control gate associated with a charge storage structure of a second portion of the plurality of charge storage structures.

18. The method of claim 16, further comprising storing an indication of the conductive state in a buffer.

19. The method of claim 16, further comprising changing the read voltage based upon a reference control signal applied to a reference module in communication with the plurality of charge storage structures.

20. The method of claim 16, wherein the radiation-detecting structure further comprises:

a second radiation-reactive material overlying a second portion of the plurality of charge storage structures; and

a thermalizing material overlying at least a portion of the neutron-reactive material.