Superlattice quantum well infrared detector

• US 8,803,127 B2
• Filed: 10/07/2011
• Issued: 08/12/2014
• Est. Priority Date: 10/11/2010
• Status: Active Grant

• Current Assignee: UD Holdings, LLC
• Original Assignee: UD Holdings, LLC
• Inventors: Kryskowski, David
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US13/825,864
• Publication Number:
  US 20130299781A1
• Time in Patent Office: 1,040 Days
• Field of Search: 438/14, 438/15, 438/22, 438 46- 48, 438/56, 438/57, 257/14, 257/15, 257/19, 257/21, 257/186
• US Class Current: 257/14
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G01J 5/022 Monolithic
• CPC Class Codes: G01J 5/023 Particular leg structure or construction or shape; Nanotubes
• CPC Class Codes: G01J 5/024 Special manufacturing steps or sacrificial layers or layer structures
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/035254 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate.

Claims

1. An infrared (IR) sensor comprising:

a thermopile including;

a substrate;

an absorber being positioned above the substrate and forming a gap thereof, the absorber being arranged to receive IR from a scene and to generate an electrical output indicative of a temperature of the scene, the absorber being formed of a superlattice quantum well structure including a plurality of alternating first and second layers such that the absorber is thermally isolated from the substrate;

a first encapsulating layer;

a second encapsulating layer, the plurality of alternating first and second layers being positioned between the first encapsulating layer and the second encapsulating layer to support the absorber over the gap; and

a first arm positioned on a first side of the absorber and a second arm positioned on a second side of the absorber, wherein the first arm is formed of a first superlattice quantum well structure and the second arm is formed of a second superlattice quantum well structure such that the absorber is thermally isolated by the first arm and the second arm.

2. The sensor of claim 1 wherein a total number of the plurality of alternating first layers and second layers is 8 to 10 layers.

3. The sensor of claim 1 wherein each of the first layers comprise silicon and each of the second layers comprise silicon germanium.

4. The sensor of claim 1 wherein each of the first and the second encapsulating layers comprise one of silicon nitride and silicon dioxide to stress compensate the plurality of alternating first and second layers.

5. The sensor of claim 1 wherein the first superlattice quantum well structure of the first arm and the second superlattice quantum well structure of the second arm each comprise a plurality of alternating layers of silicon and silicon germanium.

6. The sensor of claim 5 wherein the silicon germanium in the first arm and the second arm is one of n-type doped and p-type doped, and wherein a doping concentration of the silicon germanium is between 5×

10¹⁸ and 5×

10¹⁹ atoms/cm³.

7. The sensor of claim 5 wherein the plurality of alternating layers of silicon and silicon germanium is encapsulated by a first layer of one of silicon nitride and silicon dioxide and a second layer of one of the silicon nitride and the silicon dioxide to stress compensate the plurality of alternating layers.

8. The sensor of claim 1 wherein the plurality of alternating first and second layers is arranged to extend in a first plane and to enable the electrical output to flow along the first plane.

9. A sensing apparatus comprising:

a thermopile including;

a substrate;

an absorber positioned about the substrate, the absorber for receiving thermal energy from an external source;

a first arm positioned on a first side of the absorber and being formed of a first superlattice quantum well structure including a first plurality of alternating layers to thermally isolate the first arm; and

a second arm positioned on a second side of the absorber and being formed of a second superlattice quantum well structure including a second plurality of alternating layers to thermally isolate the second arm.

10. The apparatus of claim 9 further comprising:

a first encapsulating layer being positioned on a first side of the first plurality of alternating layers; and

a second encapsulating layer being positioned on a second side of the first plurality of alternating layers, the first encapsulating layer and the second encapsulating layer for supporting the first plurality of alternating layers.

11. The apparatus of claim 10 wherein the first encapsulating layer and the second encapsulating layer comprise one of silicon nitride and silicon dioxide to stress compensate the first plurality of alternating layers.

12. The apparatus of claim 9 further comprising:

a third encapsulating layer being positioned on a first side of the second plurality of alternating layers; and

a fourth encapsulating layer being positioned on a second side of the second plurality of alternating layers, the third encapsulating layer and the fourth encapsulating layer for supporting the second plurality of alternating layers.

13. The apparatus of claim 12 wherein the third encapsulating layer and the fourth encapsulating layer comprise one of silicon nitride and silicon dioxide to stress compensate the second plurality of alternating layers.

14. The apparatus of claim 9 wherein the first plurality of alternating layers is n-type and the second plurality of alternating layers is p-type.

15. The apparatus of claim 9 wherein the first plurality of alternating layers is arranged to extend in a first plane and to enable an electrical signal to flow along the first plane.

16. The apparatus of claim 9 wherein the second plurality of alternating layers is arranged to extend in a first plane and to enable an electrical signal to flow along the first plane.

17. A sensing apparatus comprising:

a thermopile for providing an electrical signal indicative of thermal energy, the thermopile including;

a substrate;

an absorber positioned about the substrate, the absorber for receiving thermal energy from an external source to provide the electrical signal; and

a first arm positioned on a first side of the absorber and being formed of a first superlattice quantum well structure including a first plurality of alternating layers that is arranged to extend in a first plane and to enable flow of the electrical signal along the first plane.

18. The sensing apparatus of claim 17 further comprising a second arm positioned on a second side of the absorber and being formed of a second superlattice quantum well structure including a second plurality of alternating layers that is arranged to extend in the first plane and to enable flow of the electrical signal along the first plane.

19. The sensing apparatus of claim 18 wherein the absorber includes a third superlattice quantum well structure including a third plurality of alternating layers that is arranged to extend in the first plane and to enable flow of the electrical signal along the first plane.

20. The sensing apparatus of claim 18 further comprising:

a first encapsulating layer being positioned on a first side of the second plurality of alternating layers; and

a second encapsulating layer being positioned on a second side of the second plurality of alternating layers, the first encapsulating layer and the second encapsulating layer to support the second plurality of alternating layers.

21. The sensing apparatus of claim 20 wherein the first encapsulating layer and the second encapsulating layer comprise one of silicon nitride and silicon dioxide to stress compensate the second plurality of alternating layers.

22. The sensing apparatus of claim 17 further comprising:

a first encapsulating layer being positioned on a first side of the first plurality of alternating layers; and

a second encapsulating layer being positioned on a second side of the first plurality of alternating layers, the first encapsulating layer and the second encapsulating layer to support the first plurality of alternating layers.

23. The sensing apparatus of claim 22 wherein the first encapsulating layer and the second encapsulating layer comprise one of silicon nitride and silicon dioxide to stress compensate the first plurality of alternating layers.

24. A sensing apparatus comprising:

a thermopile to provide an electrical signal indicative of thermal energy, the thermopile including;

a substrate;

an absorber positioned about the substrate, the absorber to receive thermal energy from a source to provide the electrical signal, the absorber being formed of a superlattice quantum well structure including a first plurality of alternating layers that is arranged to extend in a first plane and to enable flow of the electrical signal along the first plane; and

a first arm positioned on a first side of the absorber and being formed of a first superlattice quantum well structure including a first plurality of alternating layers that is arranged to extend in the first plane and to enable flow of the electrical signal along the first plane.

25. The sensing apparatus of claim 24 further comprising a second arm positioned on a second side of the absorber and being formed of a second superlattice quantum well structure including a second plurality of alternating layers to extend in the first plane and to enable flow of the electrical signal along the first plane.

26. A method for forming a sensing apparatus, the method comprising:

forming a substrate;

forming an absorber, the absorber for receiving thermal energy from an external source;

forming a first arm on a first side of the absorber with a first quantum well structure including a plurality of first plurality of alternating layers; and

forming a second arm on a second side of the absorber with a second quantum well structure including a second plurality of alternating layers.

27. The method of claim 26 further comprising:

forming a first encapsulating layer on a first side of the first plurality of alternating layers; and

forming a second encapsulating layer on a second side of the first plurality of alternating layers to support the first plurality of alternating layers.

28. The method of claim 27 further comprising:

forming a third encapsulating layer on a first side of the second plurality of alternating layers; and

forming a fourth encapsulating layer on a second side of the second plurality of alternating layers to support the second plurality of alternating layers.