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3D semiconductor device and structure

  • US 8,803,206 B1
  • Filed: 04/03/2013
  • Issued: 08/12/2014
  • Est. Priority Date: 12/29/2012
  • Status: Expired due to Fees
First Claim
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1. A 3D semiconductor device, comprising:

  • a first layer comprising first transistors;

    a first metal layer comprising aluminum or copper overlaying said first transistors;

    a second layer comprising second transistors;

    wherein said second layer is overlying said first metal layer, andwherein said second layer thickness is less than 200 nm,a first circuit comprising at least one of said first transistors,wherein said device comprises an Electro-Static-Discharge (“

    ESD”

    ) protection structure connected to at least one input structure,wherein said second layer comprises a first active portion of said ESD protection structure and said first layer comprises a second active portion of said ESD protection structure, andwherein said least one input structure is adapted to connect an input to said device from an external device.

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