Analog circuit and semiconductor device

• US 8,803,589 B2
• Filed: 01/03/2013
• Issued: 08/12/2014
• Est. Priority Date: 10/21/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Hirose, Atsushi, Tsubuku, Masashi, Noda, Kosei
• Primary Examiner(s): Zweizig, Jeffrey
• Application Number:
  US13/733,291
• Publication Number:
  US 20130122963A1
• Time in Patent Office: 586 Days
• Field of Search: 327/108, 327/109, 327/512, 327/514, 327/515, 327/538, 327/543, 327/564, 327/565, 327/566, 327/567, 327/574, 327/581
• US Class Current: 327/515
• CPC Class Codes: H01L 21/823412 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H04M 1/0266 for a display module assembly
• CPC Class Codes: H04R 1/02 Casings; Cabinets ; Supports therefor; Mountings therein H04R1/28 takes precedence ; attachments for microphones H04R1/08; mounting of transducers in earpieces H04R1/1075
• CPC Class Codes: H10K 59/351 comprising more than three subpixels, e.g. red-green-blue-white [RGBW]

Abstract

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10¹⁹ atoms/cm³ or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Claims

1. A semiconductor device comprising:

a first transistor;

a second transistor;

a capacitor;

a light-emitting element;

a first line; and

a second line,

wherein one of a source and a drain of the first transistor is electrically connected to the first line,

wherein the other one of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one terminal of the capacitor,

wherein the other one terminal of the capacitor is electrically connected to one of a source and a drain of the second transistor and the light-emitting element,

wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,

wherein each of the first transistor and the second transistor comprises an oxide semiconductor, and

wherein an off-state current of the first transistor is 10<sup>−

13</sup> A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

2. The semiconductor device according to claim 1, wherein an off-state current of the second transistor is 10⁻

13 A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

3. The semiconductor device according to claim 1, wherein the first line is a signal line.

4. The semiconductor device according to claim 1, wherein the second line is a power supply line.

5. The semiconductor device according to claim 1, wherein the second transistor functions as a mirror transistor.

6. The semiconductor device according to claim 1, wherein the oxide semiconductor has a hydrogen concentration of 5×

10¹⁹ atoms/cm³ or lower.

7. The semiconductor device according to claim 1, wherein a channel region of the oxide semiconductor has a carrier concentration of 5×

10¹⁴/cm³ or lower.

8. The semiconductor device according to claim 1, further comprising:

a third transistor;

a fourth transistor; and

a third line,

wherein one of a source and a drain of the third transistor is electrically connected to the first line,

wherein a gate of the first transistor and a gate of the third transistor are electrically connected to the third line,

wherein the other one of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor,

wherein the other one of the source and the drain of the fourth transistor is electrically connected to the other one terminal of the capacitor, the one of the source and the drain of the second transistor, and the light-emitting element,

wherein a gate of the fourth transistor is electrically connected to the other one of the source and the drain of the first transistor, the gate of the second transistor, and the one terminal of the capacitor, and

wherein each of the third transistor and the fourth transistor comprises the oxide semiconductor.

9. A display device comprising a display portion and a speaker, wherein the display portion comprises the semiconductor device according to claim 1.

10. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone,

wherein the display portion comprises the semiconductor device according to claim 1.

11. A semiconductor device comprising:

a first transistor;

a second transistor;

a capacitor;

a light-emitting element;

a first line; and

a second line,

wherein one of a source and a drain of the first transistor is electrically connected to the first line,

wherein the other one of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one terminal of the capacitor,

wherein the other one terminal of the capacitor is electrically connected to one of a source and a drain of the second transistor and the light-emitting element,

wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,

wherein each of the first transistor and the second transistor comprises an oxide semiconductor,

wherein the oxide semiconductor comprises In, Ga, and Zn, and

wherein an off-state current of the first transistor is 10<sup>−

13</sup> A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

12. The semiconductor device according to claim 11, wherein an off-state current of the second transistor is 10⁻

13 A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

13. The semiconductor device according to claim 11, wherein the first line is a signal line.

14. The semiconductor device according to claim 11, wherein the second line is a power supply line.

15. The semiconductor device according to claim 11, wherein the second transistor functions as a mirror transistor.

16. The semiconductor device according to claim 11, wherein the oxide semiconductor has a hydrogen concentration of 5×

10¹⁹ atoms/cm³ or lower.

17. The semiconductor device according to claim 11, wherein a channel region of the oxide semiconductor has a carrier concentration of 5×

10¹⁴/cm³ or lower.

18. The semiconductor device according to claim 11, further comprising:

a third transistor;

a fourth transistor; and

a third line,

wherein one of a source and a drain of the third transistor is electrically connected to the first line,

wherein a gate of the first transistor and a gate of the third transistor are electrically connected to the third line,

wherein the other one of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor,

wherein the other one of the source and the drain of the fourth transistor is electrically connected to the other one terminal of the capacitor, the one of the source and the drain of the second transistor, and the light-emitting element,

wherein a gate of the fourth transistor is electrically connected to the other one of the source and the drain of the first transistor, the gate of the second transistor, and the one terminal of the capacitor, and

wherein each of the third transistor and the fourth transistor comprises the oxide semiconductor.

19. A display device comprising a display portion and a speaker, wherein the display portion comprises the semiconductor device according to claim 11.

20. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone,

wherein the display portion comprises the semiconductor device according to claim 11.