Solid-state imaging device
First Claim
1. A solid-state imaging device, comprising:
- a semiconductor element layer having a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing of signals generated from the pixels is provided;
a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region;
a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region; and
a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side,wherein at least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer.
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Accused Products
Abstract
A semiconductor element layer has a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing the device is provided, a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region, a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region, and a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side. At least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer.
6 Citations
15 Claims
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1. A solid-state imaging device, comprising:
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a semiconductor element layer having a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing of signals generated from the pixels is provided; a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region; a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region; and a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side, wherein at least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for supplying an electric power to a peripheral circuit of a solid-state imaging device that has a semiconductor element layer having a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which the peripheral circuit for processing of signals generated from the pixels is provided, the method comprising:
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supplying the electric power from a first side of the semiconductor element layer to the peripheral circuit; supplying the electric power from a second side of the semiconductor element layer to the first side of the semiconductor element layer through a plurality of through-electrodes provided in the peripheral circuit region; and supplying the electric power from outside of the peripheral circuit region to the peripheral circuit region at the second side of the semiconductor element layer. - View Dependent Claims (12, 13, 14, 15)
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Specification