Power semiconductor package with double-sided cooling

• US 8,804,340 B2
• Filed: 06/08/2011
• Issued: 08/12/2014
• Est. Priority Date: 06/08/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Hauenstein, Henning M.
• Primary Examiner(s): Datskovskiy, Michail V
• Application Number:
  US13/155,804
• Publication Number:
  US 20120314372A1
• Time in Patent Office: 1,161 Days
• Field of Search: 361/679.46, 361/679.53, 361/679.54, 361/688, 361/689, 361698-702, 361707-714, 165 803- 805, 165/104.19, 165/104.33, 165/104.34, 165/185, 174/15.1, 174/16.3, 174/252, 174/15.2, 174/255, 174/52.1, 622/592, 257/691, 257/696, 257/690, 257/701, 257706-727, 257/687, 257/502, 257/341, 257/342, 257/778, 257/E23.84, 295/921, 297/40, 297/41, 297/59, 296/021, 298/31, 298/32
• US Class Current: 361/715
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 23/492 Bases or plates or solder therefor
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

According to an exemplary embodiment, a power semiconductor package includes a power module having a plurality of power devices. Each of the plurality of power devices can be a power switch. The power semiconductor package also includes a double-sided heat sink with a top side in contact with a plurality of power device top surfaces and a bottom side in contact with a bottom surface of the power module. The power semiconductor package can include at least one fastening clamp pressing the top side and the bottom side of the double-sided heat sink into the power module. The double-sided heat sink can also include a water-cooling element.

Claims

1. A power semiconductor package comprising:

a power module comprising a plurality of power devices;

said plurality of power devices having a corresponding plurality of power device top surfaces;

a double-sided heat sink with a top side in thermal contact with said plurality of power device top surfaces, with a bottom side in contact with a bottom surface of said power module, and with at least one connecting portion joining said top side and said bottom side;

wherein at least one of said plurality of power device top surfaces forms part of a power bus connecting at least two transistors of said plurality of power devices.

2. The power semiconductor package of claim 1 comprising at least one fastening clamp pressing said top side and said bottom side of said double-sided heat sink into said power module.

3. The power semiconductor package of claim 2, wherein said at least one fastening clamp is at least one heat sink screw.

4. The power semiconductor package of claim 1 wherein said top side and said bottom side of said double-sided heat sink are attached to one another by at least one fastening clamp.

5. The power semiconductor package of claim 4 wherein said at least one fastening clamp attaching said top side and said bottom side of said double-sided heat sink to one another is at least one heat sink screw.

6. The power semiconductor package of claim 1 wherein said double-sided heat sink encloses said power module.

7. The power semiconductor package of claim 1 wherein said double-sided heat sink includes a water-cooling element.

8. The power semiconductor package of claim 1 wherein said double-sided heat sink includes a water-cooling element coupling said top side and said bottom side of said double-sided heat sink.

9. The power semiconductor package of claim 1 wherein each of said corresponding plurality of power device top surfaces are configured to carry current.

10. The power semiconductor package of claim 1 wherein each of said corresponding plurality of power device top surfaces comprises a conductive clip configured to carry current.

11. The power semiconductor package of claim 1 wherein said plurality of power device top surfaces comprise copper.

12. The power semiconductor package of claim 1 wherein said bottom surface of said power module is a bottom surface of a substrate of said power module.

13. The power semiconductor package of claim 1 wherein said bottom surface of said power module comprises conductive material.

14. The power semiconductor package of claim 1 wherein said plurality of power devices are on a substrate of said power module, a cap layer being over at least one of said plurality of power devices.

15. The power semiconductor package of claim 14 wherein said substrate and said cap layer each comprise direct bonded copper (DBC).

16. The power semiconductor package of claim 14, wherein said at least one of said plurality of power devices is thermally coupled to said bottom side of said double-sided heat sink through said substrate and is thermally coupled to said top side of said double-sided heat sink through said cap layer.

17. The power semiconductor package of claim 1 comprising a plurality of contacts extending out from said double-sided heat sink to provide connection to said power module.

18. The power semiconductor package of claim 1 wherein each of said plurality of power devices is a power switch.

19. The power semiconductor package of claim 1 wherein each of said plurality of power devices comprises an insulated-gate bipolar transistor (IGBT) in parallel with a diode.

20. The power semiconductor package of claim 1 wherein said power module is a motor drive inverter module.