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Semiconductor device

  • US 8,804,396 B2
  • Filed: 10/22/2013
  • Issued: 08/12/2014
  • Est. Priority Date: 11/20/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate containing a semiconductor material;

    a semiconductor layer over the substrate;

    a first transistor comprising a first source electrode, a first drain electrode, and a first gate electrode, the first transistor being a p-type transistor;

    a second transistor comprising a second source electrode, a second drain electrode and a second gate electrode, one of the second source electrode and the second drain electrode being electrically connected to the first gate electrode;

    a third transistor comprising a third source electrode, a third drain electrode and a third gate electrode, one of the third source electrode and the third drain electrode being electrically connected to one of the first source electrode and the first drain electrode; and

    a capacitor electrically connected to the first gate electrode,wherein a channel formation region of the first transistor is provided in the substrate, andwherein a channel formation region of the second transistor is provided in the semiconductor layer formed over the substrate.

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