Non-volatile semiconductor storage device
First Claim
1. A non-volatile semiconductor storage device comprising:
- a non-volatile memory including a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines;
a monitoring section that monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines;
a determining section that determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section; and
a notification processing section that notifies a life of the non-volatile memory in accordance with a determining result by the determining section.
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Accused Products
Abstract
According to one embodiment, there is provided a non-volatile semiconductor storage device including a non-volatile memory, a monitoring section, a determining section, and a notification processing section. The non-volatile memory includes a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines. The monitoring section monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines. The determining section determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section. The notification processing section notifies a life of the non-volatile memory in accordance with a determining result by the determining section.
21 Citations
20 Claims
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1. A non-volatile semiconductor storage device comprising:
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a non-volatile memory including a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines; a monitoring section that monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines; a determining section that determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section; and a notification processing section that notifies a life of the non-volatile memory in accordance with a determining result by the determining section. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification