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Method for manufacturing semiconductor device

  • US 8,809,115 B2
  • Filed: 08/11/2011
  • Issued: 08/19/2014
  • Est. Priority Date: 09/01/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an oxide semiconductor film comprising indium and zinc by sputtering over a substrate; and

    heating the oxide semiconductor film to increase crystallinity of the oxide semiconductor film,wherein the oxide semiconductor film after the heating exhibits a peak in a range of 30°







    35°

    when the oxide semiconductor film is measured by an X-ray diffraction method.

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