Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure
First Claim
1. A structure comprising:
- a substrate structure;
a first group III-nitride layer with a first low bandgap energy formed on a surface of the substrate;
a second group III-nitride layer with a first high bandgap energy formed on the first group III-nitride layer;
a plurality of group III-oxide stripes formed on the second group III-nitride layer; and
a plurality of group III-oxide nanowires formed on the second group III-nitride layer between the group III-oxide stripes;
wherein at least some of group III-nitride nanowires with a second low bandgap energy formed on the second group III-nitride layer between the group III-oxide stripes are selectively transformed into the group III-oxide nanowires by selective photo-enhanced oxidation; and
wherein the first high bandgap energy is higher than the first low bandgap energy, and the first high bandgap energy is higher than the second low bandgap energy.
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Abstract
Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
14 Citations
14 Claims
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1. A structure comprising:
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a substrate structure; a first group III-nitride layer with a first low bandgap energy formed on a surface of the substrate; a second group III-nitride layer with a first high bandgap energy formed on the first group III-nitride layer; a plurality of group III-oxide stripes formed on the second group III-nitride layer; and a plurality of group III-oxide nanowires formed on the second group III-nitride layer between the group III-oxide stripes; wherein at least some of group III-nitride nanowires with a second low bandgap energy formed on the second group III-nitride layer between the group III-oxide stripes are selectively transformed into the group III-oxide nanowires by selective photo-enhanced oxidation; and wherein the first high bandgap energy is higher than the first low bandgap energy, and the first high bandgap energy is higher than the second low bandgap energy. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A structure comprising:
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a substrate structure; a plurality of group III-oxide stripes formed on a first surface of the substrate structure; a plurality of group III-oxide nanowires formed on the first surface of the substrate structure between the III group-oxide stripes; and a light-emitting diode (LED) structure formed over the group III-oxide stripes and the group III-oxide nanowires; wherein at least some of group III-nitride nanowires formed on the first surface of the substrate structure between the group III-oxide stripes are treated with selective photo-enhanced oxidation to form the plurality of group III-oxide nanowires. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification