Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
First Claim
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1. A semiconductor film having a heterostructure, comprising:
- a first semiconductor layer over an insulating surface, the first semiconductor layer comprising a first crystal that has a first crystal structure; and
a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an oxide semiconductor, the oxide semiconductor comprising a second crystal that has a second crystal structure;
wherein;
the first semiconductor layer is in contact with the insulating surface;
the second semiconductor layer is in contact with the first semiconductor layer;
the first semiconductor layer has higher crystallinity than the second semiconductor layer;
the first crystal structure is a wurtzite-type structure;
the second crystal structure is a hexagonal crystal structure other than the wurtzite-type structure; and
wherein the first semiconductor layer contains nitrogen at a concentration higher than or equal to 0.1 at. % and lower than 5 at. %.
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Abstract
One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.
133 Citations
19 Claims
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1. A semiconductor film having a heterostructure, comprising:
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a first semiconductor layer over an insulating surface, the first semiconductor layer comprising a first crystal that has a first crystal structure; and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an oxide semiconductor, the oxide semiconductor comprising a second crystal that has a second crystal structure; wherein; the first semiconductor layer is in contact with the insulating surface; the second semiconductor layer is in contact with the first semiconductor layer; the first semiconductor layer has higher crystallinity than the second semiconductor layer; the first crystal structure is a wurtzite-type structure; the second crystal structure is a hexagonal crystal structure other than the wurtzite-type structure; and wherein the first semiconductor layer contains nitrogen at a concentration higher than or equal to 0.1 at. % and lower than 5 at. %. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor film having a heterostructure, comprising:
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a first semiconductor layer over an insulating surface, the first semiconductor layer comprising a first crystal that has a first crystal structure; and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an oxide semiconductor, the oxide semiconductor comprising a second crystal that has a second crystal structure; wherein; the first semiconductor layer is in contact with the insulating surface; the second semiconductor layer is in contact with the first semiconductor layer; the first semiconductor layer has higher crystallinity than the second semiconductor layer; the first crystal structure is a wurtzite-type structure; the second crystal structure is an YbFe2O4 structure or an Yb2Fe3O7 structure; and the first semiconductor layer contains nitrogen at a concentration higher than or equal to 0.1 at. % and lower than 5 at. %. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor element having a heterostructure, comprising:
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a gate insulating layer over a gate electrode; a first semiconductor layer over the gate insulating layer, the first semiconductor layer comprising a first crystal that has a first crystal structure; and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an oxide semiconductor, the oxide semiconductor comprising anisotropic crystals each having a c-axis-aligned second crystal structure; wherein; the first semiconductor layer is in contact with the gate insulating layer; the second semiconductor layer is in contact with the first semiconductor layer; the first semiconductor layer has higher crystallinity than the second semiconductor layer; the first crystal structure is a wurtzite-type structure; the c-axis-aligned second crystal structure is a hexagonal crystal structure other than the wurtzite-type structure; and the first semiconductor layer contains nitrogen at a concentration higher than or equal to 0.1 at. % and lower than 5 at. %. - View Dependent Claims (12)
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13. A semiconductor element having a heterostructure, comprising:
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a gate insulating layer over a gate electrode; a first semiconductor layer over the gate insulating layer, the first semiconductor layer comprising a first crystal that has a first crystal structure; and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an oxide semiconductor, the oxide semiconductor comprising anisotropic crystals each having a c-axis-aligned second crystal structure; wherein; the first semiconductor layer is in contact with the gate insulating layer; the second semiconductor layer is in contact with the first semiconductor layer; the first semiconductor layer has higher crystallinity than the second semiconductor layer; the first crystal structure is a wurtzite-type structure; the c-axis-aligned second crystal structure is an YbFe2O4 structure or an Yb2Fe3O7 structure; and the first semiconductor layer contains nitrogen at a concentration higher than or equal to 0.1 at. % and lower than 5 at. %. - View Dependent Claims (14)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first semiconductor layer comprising a first crystal that has a first crystal structure; forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an oxide semiconductor, the oxide semiconductor comprising a second crystal that has a second crystal structure; and performing a heat treatment to the first semiconductor layer and the second semiconductor layer so that crystal growth proceeds in the second semiconductor layer from an interface with the first semiconductor layer, thereby a c-axis-aligned second crystal structure is formed in the second semiconductor layer; wherein; the first semiconductor layer has higher crystallinity than the second semiconductor layer; the first crystal structure is a wurtzite-type structure; the second crystal structure is a hexagonal crystal structure other than the wurtzite-type structure; and the first semiconductor layer contains nitrogen at a concentration higher than or equal to 0.1 at. % and lower than 5 at. %. - View Dependent Claims (16, 17, 18, 19)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Takahashi, Masahiro, Maruyama, Tetsunori
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Primary Examiner(s)YEUNG LOPEZ, FEIFEI
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Application NumberUS13/303,543Publication NumberTime in Patent Office1,000 DaysField of SearchNoneUS Class Current257/43CPC Class CodesC04B 2235/3284 Zinc oxides, zincates, cadm...C04B 2235/3286 Gallium oxides, gallates, i...C04B 35/58 based on borides, nitrides,...H01L 21/02472 OxidesH01L 21/02483 Oxide semiconducting materi...H01L 21/02513 MicrostructureH01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/0259 MicrostructureH01L 29/78681 having a semiconductor body...H01L 29/7869 having a semiconductor body...
