Semiconductor device and manufacturing method thereof

• US 8,809,855 B2
• Filed: 10/15/2012
• Issued: 08/19/2014
• Est. Priority Date: 10/19/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hayakawa, Masahiko, Honda, Tatsuya
• Primary Examiner(s): Luu, Chuong A
• Assistant Examiner(s): FORTICH, RODOLFO D
• Application Number:
  US13/651,911
• Publication Number:
  US 20130099230A1
• Time in Patent Office: 673 Days
• Field of Search: 257/43, 257/57, 257/40, 257/66, 257/72, 257/E29.273
• US Class Current: 257/43
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2203/01 transmissive
• CPC Class Codes: G02F 2203/64 Normally black display, i.e. the off state being black
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/49 Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET H01L29/435 takes precedence
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×10¹³ atoms/cm² or lower.

Claims

1. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode layer over the insulating surface;

a gate insulating film over the gate electrode layer;

an oxide semiconductor film over the gate insulating film;

a source electrode layer, and a drain electrode layer electrically connected to the oxide semiconductor film; and

an insulating film in contact with a region of the oxide semiconductor film overlapping with the gate electrode layer, the insulating film covering the source electrode layer and the drain electrode layer,

wherein a residue remains on a surface of the oxide semiconductor film,

wherein the surface is in contact with the insulating film, and

wherein the surface has a surface density of the residue of 1×

10¹³ atoms/cm² or lower.

2. The semiconductor device according to claim 1, wherein the residue is one of chlorine, fluorine, boron, phosphorus, aluminum, iron, or carbon.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film has a crystal-amorphous mixed phase structure.

4. The semiconductor device according to claim 1, wherein the gate electrode layer comprises at least one of molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium.

5. The semiconductor device according to claim 1, wherein the gate electrode layer comprises indium oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide, indium tin oxide including titanium oxide, indium tin oxide to which silicon oxide is added, indium zinc oxide, or indium zinc oxide including tungsten oxide.

6. The semiconductor device according to claim 1, wherein the gate electrode layer in contact with the gate insulating film comprises an In—

Ga—

Zn-based oxide film including nitrogen, an In—

Sn-based oxide film including nitrogen, an In—

Ga-based oxide film including nitrogen, an In—

Zn-based oxide film including nitrogen, a tin oxide film including nitrogen, an indium oxide film including nitrogen, InN, or SnN.

7. The semiconductor device according to claim 1, wherein the semiconductor device is an electrooptic device, a semiconductor circuit, or electronic equipment.

8. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode layer over the insulating surface;

a gate insulating film over the gate electrode layer;

an oxide semiconductor film over the gate insulating film;

a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film; and

an insulating film in contact with a region of the oxide semiconductor film overlapping with the gate electrode layer, the insulating film covering the source electrode layer and the drain electrode layer,

wherein a residue remains on a surface of the gate electrode layer, and

wherein the surface has a surface density of the residue of 1×

10¹³ atoms/cm² or lower.

9. The semiconductor device according to claim 8, wherein the residue is one of chlorine, fluorine, boron, phosphorus, aluminum, iron, or carbon.

10. The semiconductor device according to claim 8, wherein the oxide semiconductor film has a crystal-amorphous mixed phase structure.

11. The semiconductor device according to claim 8, wherein the gate electrode layer comprises at least one of molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium.

12. The semiconductor device according to claim 8, wherein the gate electrode layer comprises indium oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide, indium tin oxide including titanium oxide, indium tin oxide to which silicon oxide is added, indium zinc oxide, or indium zinc oxide including tungsten oxide.

13. The semiconductor device according to claim 8, wherein the gate electrode layer in contact with the gate insulating film comprises an In—

Ga—

Zn-based oxide film including nitrogen, an In—

Sn-based oxide film including nitrogen, an In—

Ga-based oxide film including nitrogen, an In—

Zn-based oxide film including nitrogen, a tin oxide film including nitrogen, an indium oxide film including nitrogen, InN, or SnN.

14. The semiconductor device according to claim 8, wherein the semiconductor device is an electrooptic device, a semiconductor circuit, or electronic equipment.

15. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode layer over the insulating surface;

a gate insulating film over the gate electrode layer;

an oxide semiconductor film over the gate, insulating film;

a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film; and

an insulating film in contact with a region of the oxide semiconductor film overlapping with the gate electrode layer, the insulating film covering the source electrode layer and the drain electrode layer,

wherein a residue remains on a surface of the oxide semiconductor film and on a surface of the gate electrode layer,

wherein the surface of the oxide semiconductor film is in contact with the insulating film,

wherein the surface of the oxide semiconductor film has a surface density of the residue of 1×

10¹³ atoms/cm² or lower, and

wherein the surface of the gate electrode layer has a surface density of the residue of 1×

10¹³ atoms/cm² or lower.

16. The semiconductor device according to claim 15, wherein the residue is one of chlorine, fluorine, boron, phosphorus, aluminum, iron, or carbon.

17. The semiconductor device according to claim 15, wherein the oxide semiconductor film has a crystal-amorphous mixed phase structure.

18. The semiconductor device according to claim 15, wherein the gate electrode layer comprises at least one of molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium.

19. The semiconductor device according to claim 15, wherein the gate electrode layer comprises indium oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide, indium tin oxide including titanium oxide, indium tin oxide to which silicon oxide is added, indium zinc oxide, or indium zinc oxide including tungsten oxide.

20. The semiconductor device according to claim 15, wherein the gate electrode layer in contact with the gate insulating film comprises an In—

Ga—

Zn-based oxide film including nitrogen, an In—

Sn-based oxide film including nitrogen, an In—

Ga-based oxide film including nitrogen, an In—

Zn-based oxide film including nitrogen, a tin oxide film including nitrogen, an indium oxide film including nitrogen, InN, or SnN.

21. The semiconductor device according to claim 15, wherein the semiconductor device is an electrooptic device, a semiconductor circuit, or electronic equipment.