Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate
First Claim
1. A Group III nitride semiconductor device comprising:
- a substrate having an electrically conductivity, the substrate including a primary surface, the primary surface comprising a first gallium nitride based semiconductor;
a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface,a p-type contact layer, the first p-type gallium nitride based semiconductor layer being provided between the substrate and the p-type contact layer, and the p-type contact layer comprising oxygen as impurity, and an oxygen concentration of the p-type contact layer being more than that of the first p-type gallium nitride based semiconductor layer, andan electrode in direct contact with the p-type contact layer,the primary surface of the substrate being inclined at an angle in a range of not less than 50 degrees and less than 130 degrees from a plane perpendicular to a reference axis, the reference axis extending along a c-axis of the first gallium nitride based semiconductor,an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer being not more than 5×
1017 cm−
3, anda ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer being not more than 1/10.
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Accused Products
Abstract
Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×1017 cm−3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.
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Citations
22 Claims
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1. A Group III nitride semiconductor device comprising:
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a substrate having an electrically conductivity, the substrate including a primary surface, the primary surface comprising a first gallium nitride based semiconductor; a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface, a p-type contact layer, the first p-type gallium nitride based semiconductor layer being provided between the substrate and the p-type contact layer, and the p-type contact layer comprising oxygen as impurity, and an oxygen concentration of the p-type contact layer being more than that of the first p-type gallium nitride based semiconductor layer, and an electrode in direct contact with the p-type contact layer, the primary surface of the substrate being inclined at an angle in a range of not less than 50 degrees and less than 130 degrees from a plane perpendicular to a reference axis, the reference axis extending along a c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer being not more than 5×
1017 cm−
3, anda ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer being not more than 1/10. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An epitaxial substrate for a Group III nitride semiconductor device, comprising:
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a substrate having an electrically conductivity, the substrate including a primary surface, and the primary surface comprising a first gallium nitride based semiconductor; a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface, a p-type contact layer, the first p-type gallium nitride based semiconductor layer being provided between the substrate and the p-type contact layer, and the p-type contact layer comprising oxygen as impurity, and an oxygen concentration of the p-type contact layer being more than that of the first p-type gallium nitride based semiconductor layer, and an electrode in direct contact with the p-type contact layer, the primary surface of the substrate being inclined at an angle in a range of not less than 50 degrees and less than 130 degrees from a plane perpendicular to a reference axis, the reference axis extending along a c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer being not more than 5×
1017 cm−
3, anda ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer being not more than 1/10. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A Group III nitride semiconductor device comprising:
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a substrate having an electrically conductivity, the substrate including a primary surface, the primary surface comprising a first gallium nitride based semiconductor; a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface, a p-type contact layer, the first p-type gallium nitride based semiconductor layer being provided between the substrate and the p-type contact layer, and an oxygen concentration of the p-type contact layer being more than 5×
1017 cm−
3, andan electrode in direct contact with the p-type contact layer, the primary surface of the substrate being inclined at an angle in a range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis, the reference axis extending along a c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer being not more than 5×
1017 cm−
3, anda ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer being not more than 1/10.
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Specification