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Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

  • US 8,809,917 B2
  • Filed: 07/29/2009
  • Issued: 08/19/2014
  • Est. Priority Date: 05/09/2005
  • Status: Active Grant
First Claim
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1. A nanotube memory device, comprising:

  • a first and second electrodes;

    a switching element having a predetermined pattern comprising a porous network of non-woven nanotubes wherein at least a first nanotube is in electrical communication with the first electrode and at least a second nanotube is in electrical communication with the second electrode, wherein said porous network of non-woven nanotubes is capable of switching between at least two non-volatile resistive states; and

    a protective barrier to protect the switching element.

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