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Semiconductor device, memory device, and method for manufacturing the semiconductor device

  • US 8,809,928 B2
  • Filed: 04/25/2012
  • Issued: 08/19/2014
  • Est. Priority Date: 05/06/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a source electrode and a drain electrode over an insulating surface;

    an oxide semiconductor layer over the source electrode and the drain electrode;

    a first electrode over one of the source electrode and the drain electrode with the oxide semiconductor layer interposed therebetween;

    a gate insulating layer over and in contact with the oxide semiconductor layer and the first electrode; and

    a gate electrode over the gate insulating layer so as to overlap with the first electrode.

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