Semiconductor device

• US 8,809,966 B2
• Filed: 03/12/2008
• Issued: 08/19/2014
• Est. Priority Date: 03/12/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zundel, Markus
• Primary Examiner(s): TAYLOR, EARL N
• Application Number:
  US12/046,760
• Publication Number:
  US 20090230561A1
• Time in Patent Office: 2,351 Days
• Field of Search: 257/331, 257/401, 257/773
• US Class Current: 257/401
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/66477 with an insulated gate, i.e. MISFET
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source. The source metal contact includes a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.

Claims

1. A semiconductor device comprising:

a top side having a central region and a peripheral edge region surrounding the central region;

an active area in the central region comprising a source and a gate and a cell field;

a gate metal contact arranged in the peripheral edge region deposited above and forming an electrical contact with the gate; and

a source metal contact covering the active area such that the peripheral edge region is outside the source metal contact, the source metal contact being deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area,

wherein the source metal contact is bordered by two opposite long sides and two opposite short sides, wherein on each of the two short sides a single through contact is provided, and wherein on each of the two long sides a plurality of metal through contacts are arranged at intervals spaced from another.

2. The semiconductor device of claim 1, wherein an electrically insulating layer is disposed between the source metal contact and the source and between the gate metal contact and the gate and wherein the metal through contacts extend through the electrically insulating layer and are disposed on the source.

3. The semiconductor device of claim 1, wherein, in a plan view, the metal through contacts are generally rectangular having a longer and a shorter dimension, the longer direction being arranged generally parallel to the side of the source metal contact.

4. The semiconductor device of claim 1, wherein the plurality of metal through contacts are arranged in two or more adjacent rows, and the metal through contacts of adjacent rows are offset with respect to one another.

5. The semiconductor device of claim 1, wherein, in a plan view, the metal through contacts are generally funnel-shaped.

6. The semiconductor device of claim 1, wherein one or more rows of metal through contacts comprise metal through contacts comprising a generally rectangular shape in a plan view and one or two rows of metal through contacts comprise metal through contacts comprising a generally funnel-shape in the plan view.

7. The semiconductor device of claim 1, wherein the metal through contacts are positioned adjacent two opposing sides of the active area.

8. The semiconductor device of claim 1, wherein the single through contact provided on each of the two short sides comprises a long metal through contact extending along the entire short side.

12. The semiconductor device of claim 1, wherein the cell field includes a trench, and wherein the source and the gate are positioned in the trench.

13. The semiconductor device of claim 12, wherein an insulating layer separates the source and the gate within the trench.

14. The semiconductor device of claim 12, wherein the source is positioned within the active area, and wherein the gate extends beyond the source to the peripheral edge region.

9. A semiconductor device comprising:

a top side having a central region and a peripheral edge region surrounding the central region;

an active area in the central region comprising a source and a gate and a cell field;

a gate metal contact arranged in the peripheral edge region above and forming an electrical contact with the gate;

a source metal contact covering the active area such that the peripheral edge region is outside the source metal contact, the source metal contact being arranged above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more adjacent rows, the metal through contacts of a first row being arranged offset with respect to an adjacent row,

wherein the source metal contact is bordered by two opposite long sides and two opposite short sides, wherein on each of the two short sides a single through contact is provided, and wherein on each of the two long sides a plurality of metal through contacts are arranged at intervals spaced from one another.

10. A semiconductor device comprising:

a top side having a central region and a peripheral edge region;

an active area in the central region comprising a source and a gate and a cell field, wherein the active area is generally rectangular with short sides and long sides;

a long metal through contact extending along the entire short side of the active area;

a gate metal contact arranged in the peripheral edge region deposited above and forming an electrical contact with the gate; and

a source metal contact covering the active area deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.

11. A semiconductor device comprising:

a top side having a central region and a peripheral edge region;

an active area in the central region comprising a source and a gate and a cell field, wherein the active area is generally rectangular with short sides and long sides;

first and second long metal through contacts extending along opposing short sides of the active area;

a gate metal contact arranged in the peripheral edge region deposited above and forming an electrical contact with the gate; and

a source metal contact covering the active area deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.