Apparatus integrating microelectromechanical system device with circuit chip and methods for fabricating the same

• US 8,809,972 B2
• Filed: 06/30/2011
• Issued: 08/19/2014
• Est. Priority Date: 06/30/2010
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Lin, Shih Ting, Hsu, Yu Wen, Huang, Chao Ta
• Primary Examiner(s): KUO, WENSING W
• Application Number:
  US13/173,119
• Publication Number:
  US 20120001276A1
• Time in Patent Office: 1,146 Days
• Field of Search: None
• US Class Current: 257/415
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81C 1/00134 comprising flexible or deformable structures manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C19/5719, pressure sensors G01L9/0042, accelerometers G01P15/0802, acoustic transducers or diaphragms therefor H04R31/00
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 2203/00 Forming microstructural systems
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H10N 30/2041 Beam type
• CPC Class Codes: H10N 30/304 Beam type

Abstract

One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which comprises a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip.

Claims

1. An apparatus integrating a microelectromechanical system device with a circuit chip, the apparatus comprising:

a circuit chip comprising;

a substrate having an active surface with at least one electrical circuit area; and

a plurality of metal bonding areas disposed on the active surface and electrically connected to the electrical circuit area;

a microelectromechanical system device comprising;

a plurality of bases connected to at least one of the metal bonding areas;

at least one sensing element elastically connected to the bases; and

a sealing ring surrounding the bases and connected to at least one of the metal bonding areas; and

a lid being opposite to the active surface of the circuit chip, and connected to the sealing ring so as to form a hermetic chamber surrounding the at least one sensing element, wherein the microelectromechanical system device further comprises a plurality of supporting bases connected to at least one of the metal bonding areas, wherein the sealing ring comprises an insulating layer, two silicon layers clipping the insulating layer and a plurality of conductive pillars penetrating the insulating layer, wherein the material of the lid is a conductive material, and the lid is electrically connected to the metal bonding area of the circuit chip by the electrical path through the sealing ring and the conductive pillar.

2. The apparatus as claimed in claim 1, wherein the circuit chip further comprises a plurality of conductive traces and a plurality of conductive pads, and at least one conductive traces is connected to one of the electrical circuit areas and one of the conductive pads.

3. An apparatus integrating a microelectromechanical system device, the apparatus comprising:

a circuit chip comprising;

a substrate having an active surface with at least one electrical circuit area; and

a plurality of metal bonding areas disposed on the active surface and electrically connected to the electrical circuit area;

a microelectromechanical system device comprising;

a plurality of bases connected to at least one of the metal bonding areas;

at least one sensing element elastically connected to the bases; and

a sealing ring surrounding the bases and connected to at least one of the metal bonding areas; and

a lid being opposite to the active surface of the circuit chip and connected to the sealing ring so as to form a hermetic chamber surrounding the at least one sensing element, wherein the microelectromechanical system device further comprises a plurality of supporting bases connected to at least one of the metal bonding areas, wherein the sealing ring comprises a first silicon layer, wherein the lid comprises an insulating layer, a second silicon layer, and a plurality of conductive pillars penetrating the insulating layer and connecting the first silicon layer and the second silicon layer, and the first silicon layer and the second silicon layer clip the insulating layer, wherein the second silicon layer comprises a foundation and a plurality of island sections, the island sections and the foundation are electrically insulated from each other, and the island sections are respectively connected to the supporting bases by the insulating layer.

4. The apparatus as claimed in claim 3, further comprising a plurality of ring air gap disposed between the island sections and the foundation.

5. The apparatus as claimed in claim 3, further comprising a plurality of second ring insulating walls disposed between the island sections and the foundation.

6. The apparatus as claimed in claim 3, wherein the second silicon layer further comprises a plurality of second holes and a isolation layer, and the isolation layer seals first openings disposed on an end of each of the second holes.

7. The apparatus as claimed in claim 6, further comprising a plurality of conductive pads respectively disposed in second opening of the isolation layer and above the island section, wherein the conductive pads are electrically connected to the electrical circuit areas respectively by the electrical path through island sections, the conductive pillars and the supporting bases.

8. The apparatus as claimed in claim 5, wherein the supporting bases and the sealing ring are spaced apart by an insulating material and the insulating material surrounds each of the supporting bases so as to form a first ring insulating wall, and each of the first ring insulating walls penetrates the first silicon layer of the supporting base.

9. The apparatus as claimed in claim 5, wherein the supporting bases and the sealing ring are spaced apart by the space, each of the supporting bases is embedded with a first ring insulating wall, and each of the first ring insulating walls penetrates the first silicon layer of the supporting base.

10. The apparatus as claimed in claim 8, wherein each of the supporting bases is aligned with one of the island sections, and the first ring insulating wall is also aligned with the second ring insulating wall.

11. The apparatus as claimed in claim 7, wherein the at least one conductive pillar penetrates the first silicon layer of the supporting base, the island section of the second silicon layer and the insulating layer disposed between the supporting base and the island section to electrically connect the conductive pads and the metal bonding areas respectively.

12. The apparatus as claimed in claim 11, wherein the at least one sensing element is elastically and electrically connected to the supporting bases.