Bond ring for a first and second substrate
First Claim
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1. A device, comprising:
- a first substrate including a first microelectromechanical system (MEMS) device and a second MEMS device; and
a second substrate bonded to the first substrate, wherein the second substrate is bonded to the first substrate at a first bond ring, a second bond ring, and a third bond ring;
wherein the first bond ring and the second bond ring encircle the first MEMS device and do not encircle the second MEMS device and the second bond ring encircles the first bond ring,wherein the first bond ring comprises a first eutectic bond and the second bond ring comprises a second eutectic bond, wherein the first eutectic bond is a Germanium (Ge) and Aluminum (Al) bond and the second eutectic bond is an Aluminum (Al) and amorphous-Silicon (a-Si) bond; and
wherein the third bond ring encircles the first and second MEMS devices.
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Abstract
The present disclosure provides a device having a plurality of bonded substrates. The substrates are bonded by a first bond ring and a second bond ring. In an embodiment, the first bond ring is a eutectic bond and the second bond ring is at least one of an organic material and a eutectic bond. The second bond ring encircles the first bond ring. The first bond ring provides a hermetic region of the device. In a further embodiment, a plurality of wafers are bonded which include a third bond ring disposed at the periphery of the wafers.
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Citations
16 Claims
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1. A device, comprising:
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a first substrate including a first microelectromechanical system (MEMS) device and a second MEMS device; and a second substrate bonded to the first substrate, wherein the second substrate is bonded to the first substrate at a first bond ring, a second bond ring, and a third bond ring; wherein the first bond ring and the second bond ring encircle the first MEMS device and do not encircle the second MEMS device and the second bond ring encircles the first bond ring, wherein the first bond ring comprises a first eutectic bond and the second bond ring comprises a second eutectic bond, wherein the first eutectic bond is a Germanium (Ge) and Aluminum (Al) bond and the second eutectic bond is an Aluminum (Al) and amorphous-Silicon (a-Si) bond; and wherein the third bond ring encircles the first and second MEMS devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A device, comprising:
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a first wafer having a micro-electromechanical system (MEMS) device; and a second wafer having a complementary metal oxide semiconductor (CMOS) device, wherein the first wafer and the second wafer are bonded together using at least one wafer-level bond ring, wherein the at least one wafer-level bond ring is disposed on the peripheral region on the first wafer and the second wafer such that the wafer-level bond ring encircles a plurality of MEMS and CMOS devices operable to be subsequently separated into individual chips; and at least one device level bond ring encircling the MEMS device and the CMOS device, wherein the at least one device level bond ring includes a bond between Aluminum (Al) and amorphous-Silicon (a-Si). - View Dependent Claims (14)
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15. A device, comprising:
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a first substrate including a microelectromechanical system (MEMS) device; and a second substrate bonded to the first substrate, wherein the second substrate is bonded to the first substrate at a first bond ring and a second bond ring, wherein the second bond ring surrounds and is concentric with the first bond ring; wherein the first bond ring and the second bond ring encircle the MEMS device; wherein the first bond ring comprises a first eutectic bond and the second bond ring comprises a second eutectic bond, the second eutectic bond having a eutectic point higher than the first eutectic bond; and wherein the second eutectic bond defines a gap distance between the bonded first and second substrates. - View Dependent Claims (16)
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Specification