Bond ring for a first and second substrate

• US 8,810,027 B2
• Filed: 09/27/2010
• Issued: 08/19/2014
• Est. Priority Date: 09/27/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Cheng, Chun-Wen, Yang, Hsueh-An
• Primary Examiner(s): MUNOZ, ANDRES F
• Application Number:
  US12/891,062
• Publication Number:
  US 20120074554A1
• Time in Patent Office: 1,422 Days
• Field of Search: None
• US Class Current: 257/723
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 23/02 Containers; Seals H01L23/12, H01L23/34, H01L23/48, H01L23/552, H01L23/66 take precedence; for memories G11C
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present disclosure provides a device having a plurality of bonded substrates. The substrates are bonded by a first bond ring and a second bond ring. In an embodiment, the first bond ring is a eutectic bond and the second bond ring is at least one of an organic material and a eutectic bond. The second bond ring encircles the first bond ring. The first bond ring provides a hermetic region of the device. In a further embodiment, a plurality of wafers are bonded which include a third bond ring disposed at the periphery of the wafers.

Claims

1. A device, comprising:

a first substrate including a first microelectromechanical system (MEMS) device and a second MEMS device; and

a second substrate bonded to the first substrate, wherein the second substrate is bonded to the first substrate at a first bond ring, a second bond ring, and a third bond ring;

wherein the first bond ring and the second bond ring encircle the first MEMS device and do not encircle the second MEMS device and the second bond ring encircles the first bond ring,

wherein the first bond ring comprises a first eutectic bond and the second bond ring comprises a second eutectic bond, wherein the first eutectic bond is a Germanium (Ge) and Aluminum (Al) bond and the second eutectic bond is an Aluminum (Al) and amorphous-Silicon (a-Si) bond; and

wherein the third bond ring encircles the first and second MEMS devices.

2. The device of claim 1, further comprising:

a fourth bond ring encircling the first and second bond rings and not encircling the second MEMS device.

3. The device of claim 1, wherein the first bond ring provides a hermetic region of the first MEMS device.

4. The device of claim 1, wherein the first eutectic bond has a first interface directly with the first substrate and a second interface directly with the second substrate.

5. The device of claim 1, wherein the second eutectic bond has a first interface directly with the first substrate and a second interface directly with the second substrate.

6. The device of claim 1, wherein the third bond ring includes an organic material.

7. The device of claim 6, wherein the organic material is a polyimide.

8. The device of claim 1, wherein the second bond ring is adjacent to the first bond ring and wherein each of the first and second bond rings directly interface each of the first and second substrates.

9. The device of claim 1, wherein the first substrate is a first wafer and the second substrate is a second wafer including a device fabricated using a Complementary Metal Oxide Semiconductor (CMOS) based process.

10. The device of claim 9, wherein the third bond ring is disposed at a periphery of the first wafer and the second wafer.

11. The device of claim 1, wherein first bond ring is comprised of a first bonding element on the first substrate and a second bonding element on the second substrate, wherein the second bond ring is composed of a third bonding element disposed on the first substrate and wherein the third bonding element has a direct physical interface with the first bonding element.

12. The device of claim 1, wherein the second bond ring is comprised of a first bonding element on the first substrate and a second bonding element on the second substrate, and wherein at least one of the first and second bonding elements is operable to be used as a bump that controls a gap between the first and second substrates.

13. A device, comprising:

a first wafer having a micro-electromechanical system (MEMS) device; and

a second wafer having a complementary metal oxide semiconductor (CMOS) device, wherein the first wafer and the second wafer are bonded together using at least one wafer-level bond ring, wherein the at least one wafer-level bond ring is disposed on the peripheral region on the first wafer and the second wafer such that the wafer-level bond ring encircles a plurality of MEMS and CMOS devices operable to be subsequently separated into individual chips; and

at least one device level bond ring encircling the MEMS device and the CMOS device, wherein the at least one device level bond ring includes a bond between Aluminum (Al) and amorphous-Silicon (a-Si).

14. The device of claim 13, wherein the at least one wafer level bond is a polyimide.

15. A device, comprising:

a first substrate including a microelectromechanical system (MEMS) device; and

a second substrate bonded to the first substrate, wherein the second substrate is bonded to the first substrate at a first bond ring and a second bond ring, wherein the second bond ring surrounds and is concentric with the first bond ring;

wherein the first bond ring and the second bond ring encircle the MEMS device;

wherein the first bond ring comprises a first eutectic bond and the second bond ring comprises a second eutectic bond, the second eutectic bond having a eutectic point higher than the first eutectic bond; and

wherein the second eutectic bond defines a gap distance between the bonded first and second substrates.

16. The device of claim 15, wherein the gap distance is less than approximately 100 μ

m.