Nitride semiconductor laser diode
First Claim
1. A nitride semiconductor laser diode comprising:
- a substrate;
an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate;
an active layer having a light emitting layer including InxAlyGa1-x-yN (0<
x<
1, 0≦
y<
1, and 0<
x+y<
1) and disposed on the n-side nitride semiconductor layer; and
a p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer;
wherein the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, anda concentration distribution of the p-type impurity in a depth direction from the light emitting layer toward the surface of the p-side nitride semiconductor layer has a local maximum with the concentration of the p-type impurity of 5×
1018 cm−
3 or greater in a range within 300 nm from the top surface of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after passing the local maximum, the concentration of the p-type impurity is not less than 6×
1017 cm−
3 in the range within 300 nm.
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Accused Products
Abstract
A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InxAlyGa1-x-yN (0<x<1, 0≦y<1, and 0<x+y<1) and disposed on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer. The lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater. A concentration distribution of the p-type impurity in a depth direction from the light emitting layer toward the surface of the p-side nitride semiconductor layer has a local maximum with the concentration of the p-type impurity of 5×1018 cm−3 or greater in a range within 300 nm from the top surface of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after passing the local maximum, the concentration of the p-type impurity is not less than 6×1017 cm−3 in the range within 300 nm.
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Citations
20 Claims
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1. A nitride semiconductor laser diode comprising:
-
a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InxAlyGa1-x-yN (0<
x<
1, 0≦
y<
1, and 0<
x+y<
1) and disposed on the n-side nitride semiconductor layer; anda p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer; wherein the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, and a concentration distribution of the p-type impurity in a depth direction from the light emitting layer toward the surface of the p-side nitride semiconductor layer has a local maximum with the concentration of the p-type impurity of 5×
1018 cm−
3 or greater in a range within 300 nm from the top surface of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after passing the local maximum, the concentration of the p-type impurity is not less than 6×
1017 cm−
3 in the range within 300 nm. - View Dependent Claims (2, 12, 13, 14, 17, 18)
-
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3. The nitride semiconductor laser diode according to claim wherein the concentration distribution of the p-type impurity in a depth direction reaches a local minimum of not less than 6×
- 1017 cm−
3 after passing the local maximum and in the range within 300 nm and, after passing the local minimum, increases to 1×
1018 cm−
3 or greater. - View Dependent Claims (4)
- 1017 cm−
-
5. A nitride semiconductor laser diode comprising:
-
a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer of a quantum well structure including a well layer including InxAlyGa1-x-yN (0<
x<
1, 0≦
y<
1, 0<
x+y<
1), and disposed on the n-side nitride semiconductor layer; anda p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer; wherein the n-side nitride semiconductor layer includes a GaN layer or AlGaN layer the well layer in the active layer has a lasing wavelength of 500 nm or greater, and wherein the nitride semiconductor laser diode comprises a first p-type nitride semiconductor layer in a range within 300 nm from the top surface of the well layer which is closest to the p-side nitride semiconductor layer, the first p-type nitride semiconductor layer being made of an Al-containing nitride semiconductor, having a bandgap larger than that of the well layer and having a p-type impurity concentration of 5×
1018 cm−
3 or greater anda second p-type semiconductor layer on the first p-type nitride semiconductor layer, the second p-type semiconductor layer having, within the 300 nm range, a p-type impurity concentration smaller than a p-type impurity concentration in the first p-type semiconductor layer and not smaller than 6×
1017 cm−
3. - View Dependent Claims (6, 7, 8, 9, 10, 15, 19)
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11. A nitride semiconductor laser diode comprising:
-
a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer of a multi quantum well structure having a well layer including InxAlyGa1-x-yN (0<
x<
1, 0≦
y<
1, 0<
x+y<
1), and disposed on the n-side nitride semiconductor layer; anda p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer; wherein the n-side nitride semiconductor layer includes a GaN layer or AlGaN layer, the active layer includes a well layer having lasing wavelength of 500 nm or greater and a barrier layer located closest to the p-side in the active layer and having a thickness of 300 nm or less, the p-side nitride semiconductor layer includes, from the side closer to the active layer, a first p-type nitride semiconductor layer made of a nitride semiconductor containing Al having a band gap larger than the band gap of the well layer, having a p-type impurity with a concentration of 5×
1018 cm−
3 or greater, and having a thickness of 3 to 50 nm,a second p-type nitride semiconductor layer having a p-type impurity concentration smaller than a p-type impurity concentration of the first semiconductor layer and not smaller than 6×
1017 cm−
3,a third p-type nitride semiconductor layer having a band gap larger than the band gap of the second p-type nitride semiconductor layer and smaller than the band gap of the first p-type nitride semiconductor layer, and a fourth p-type nitride semiconductor layer having a p-type impurity concentration of 5×
1019 cm−
3 or greater;wherein dislocations originated in the well layer penetrate through the p-side nitride semiconductor layer. - View Dependent Claims (16, 20)
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Specification