Laser liftoff structure and related methods

• US 8,815,622 B2
• Filed: 06/03/2013
• Issued: 08/26/2014
• Est. Priority Date: 03/20/2007
• Status: Active Grant

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Yun, Feng
• Primary Examiner(s): MULPURI, SAVITRI
• Application Number:
  US13/908,917
• Publication Number:
  US 20130337599A1
• Time in Patent Office: 449 Days
• Field of Search: 438/47, 438/113, 438/22, 438/33
• US Class Current: 438/47
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

Light-emitting devices, and related components, systems, and methods associated therewith are provided.

Claims

1. A method of making a light emitting device, the method comprising:

providing a first multi-layer stack, comprising;

a substrate,

a submount,

a high bandgap buffer region between the substrate and the submount, wherein the buffer region includes a dislocation reduction region, and

a sacrificial portion comprising a semiconductor material between the buffer region and the submount;

exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion, wherein the exposing comprises passing at least a portion of the electromagnetic radiation through at least part of the high bandgap buffer region, and the decomposing comprises forming a gas and a liquid; and

removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack,

wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation.

2. The method of claim 1, wherein the electromagnetic radiation has a wavelength of smaller than 250 nm.

3. The method of claim 1, wherein the buffer region further comprises an AlN layer.

4. The method of claim 1, wherein the multilayer stack comprises a light generating region.

5. The method of claim 1, wherein the substrate is formed of AlN.

8. The method of claim 1, wherein removing the substrate and at least part of the buffer region from the first multi-layer stack forms the second multi-layer stack and a third multi-layer stack.

6. A method of making a light emitting device, the method comprising:

providing a first multi-layer stack, comprising;

a substrate,

a submount,

a high bandgap buffer region comprising a dislocation reduction region between the substrate and the submount, and

a sacrificial portion comprising a semiconductor material between the buffer region and the submount;

exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion, wherein the exposing comprises passing at least a portion of the electromagnetic radiation through at least part of the high bandgap buffer region; and

removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack including an n-doped region having a thickness of less than 1000 nm at an upper surface of the multi-layer stack,

wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation.

7. The method of claim 6, wherein the thickness of the n-doped region is less than 500 nm.

9. The method of claim 6, wherein removing the substrate and at least part of the buffer region from the first multi-layer stack forms the second multi-layer stack and a third multi-layer stack.