Low-profile MEMS thermal printhead die having backside electrical connections

• US 8,815,626 B2
• Filed: 09/25/2013
• Issued: 08/26/2014
• Est. Priority Date: 02/04/2011
• Status: Active Grant

• Current Assignee: Kateeva, Inc.
• Original Assignee: Kateeva, Inc.
• Inventors: Golda, Dariusz, Kim, Hyeun-Su, Gassend, Valerie
• Primary Examiner(s): Kebede, Brook
• Application Number:
  US14/036,869
• Publication Number:
  US 20140024149A1
• Time in Patent Office: 335 Days
• Field of Search: 438/21, 438/52, 438/53, 438/612
• US Class Current: 438/52
• CPC Class Codes: B41J 2/335 Structure of thermal heads
• CPC Class Codes: B41J 2/3359 Manufacturing processes
• CPC Class Codes: B81C 1/00309 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A thermal printhead die is formed from an SOI structure as a MEMS device. The die has a printing surface, a buried oxide layer, and a mounting surface opposite the printing surface. A plurality of ink delivery sites are formed on the printing surface, each site having an ink-receiving and ink-dispensing structure. An ohmic heater is formed adjacent to each structure, and an under-bump metallization (UBM) pad is formed on the mounting surface and is electrically connected to the ohmic heater, so that ink received by the ink-delivery site and electrically heated by the ohmic heater may be delivered to a substrate by sublimation. A through-silicon-via (TSV) plug may be formed through the thickness of the die and electrically coupled through the buried oxide layer from the ohmic heater to the UBM pad. Layers of interconnect metal may connect the ohmic heater to the UBM pad and to the TSV plug.

Claims

1. A method of manufacturing a MEMS thermal printhead die on an SOI structure having a top surface, a buried oxide layer, and a mounting surface opposite the top surface, the method comprising steps for:

(a) forming a plurality of ink-delivery sites on the top surface, wherein each ink-delivery site comprises a plurality of ink-dispensing pores formed through the SOI structure;

(b) forming an ohmic heater adjacent to at least one of the ink-dispensing pores;

(c) forming at least one under-bump metallization (“

UBM”

) pad on the mounting surface; and

(d) forming at least one through-silicon via (“

TSV”

) plug, the TSV plug electrically coupling the ohmic heater to the UBM pad through the thickness of the printhead die.

2. The method of claim 1, further comprising:

forming through the mounting surface a plurality of ink-receiving cavities, each ink-receiving cavity in fluid communication with a corresponding plurality of ink-dispensing pores, wherein the plurality of ink dispensing pores provide a fluid communication path between the ink-receiving cavity and the top surface.

3. The method of claim 1, further comprising:

forming one or more layers of interconnect metal coupling the TSV plug to the ohmic heater and to the UBM pad.

4. The method of claim 3, wherein the interconnect metal comprises a titanium-tungsten-aluminum layer.

5. The method of claim 3, further comprising forming at least one electrical conduction cavity through the printing surface;

wherein at least one of the layers of interconnect metal connects the ohmic heater to the TSV plug through the buried oxide along a bottom surface of the at least one electrical conduction cavity.

6. The method of claim 1, wherein step (d) further comprises forming the TSV plug by doping a portion of the SOI structure.

7. The method of claim 1, wherein the UBM pad is formed as a layer of evaporated titanium-nickel-gold.

8. The method of claim 1, further comprising forming a dielectric layer along the mounting surface by plasma-enhanced chemical vapor deposition, the dielectric layer defining a soldering cavity exposing at least a portion of the UBM pad for connection to an external electrical source.

9. A method for manufacturing a printing system utilizing a MEMS thermal printhead die, comprising:

(a) forming a plurality of ink-delivery sites on a top surface of an SOI structure, wherein each ink-delivery site comprises a plurality of ink-dispensing pores through the SOI structure,

(b) forming a plurality of ohmic heaters, each ohmic heater adjacent to a corresponding plurality of ink-dispensing pores;

(c) forming one or more under-bump metallization (“

UBM”

) pads on a mounting surface of the SOI structure;

(d) forming a plurality of through-silicon via (“

TSV”

) plugs through the SOI structure, each TSV plug electrically coupling one of the ohmic heaters to the one or more UBM pads;

(e) dispensing a solder ball onto each of the UBM pads;

(f) reflowing the solder balls;

(g) contacting the reflowed solder balls to a corresponding complementary pad on a mounting substrate; and

(h) curing the solder balls so that the cured solder provides mechanical connection between the printhead die and the mounting substrate, and electrical connection from each said complementary pad to one of the ohmic heaters through the mounting surface of the SOI structure.

10. The method of claim 9, further comprising:

forming a plurality of ink-receiving cavities through a mounting surface of the SOI structure, the mounting surface opposite the top surface, wherein each ink-receiving cavity is in fluid communication with a corresponding plurality of ink-dispensing pores.

11. The method of claim 9, further comprising:

forming one or more layers of interconnect metal coupling each TSV plug to one of the ohmic heaters and to the one or more UBM pads.

12. The method of claim 11, further comprising:

forming at least one conduction cavity through the top surface of the SOI structure;

wherein at least one of the layers of interconnect metal connects one of the ohmic heaters to one of the TSV plugs along a bottom surface of the conduction cavity and through the buried oxide layer.

13. The method of claim 9, wherein step (d) further comprises forming the TSV plugs by doping a portion of the SOI structure.

14. A method for attaching a MEMS printhead die to a mounting substrate, comprising:

forming a plurality of under-bump metallization (UBM) pads on a mounting surface of the printhead die;

forming a plurality of complementary pads on the mounting substrate;

locating a solder ball onto each of the UBM pads;

reflowing the solder balls on the UBM pads to form solder bumps of substantially uniform size;

mechanically aligning the UBM pads of the printhead die to the complementary pads of the mounting substrate;

preloading the solder bumps between the UBM pads and the complementary pads; and

reflowing the solder bumps so that the solder bumps, when cured, mechanically connect the printhead die to the mounting substrate and electrically connect each of the UBM pads to its said complementary pad.

15. The method of claim 14, wherein the UBM pads are formed as individual layers of evaporated titanium-nickel-gold.

16. The method of claim 14, further comprising:

forming on the mounting surface, prior to the locating step, a dielectric layer defining soldering cavities that expose at least a portion of each of the UBM pads.

17. The method of claim 16 wherein the dielectric layer is formed by plasma-enhanced chemical vapor deposition.

18. The claim 14, wherein the step of locating is performed using a jetting technique.