Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component

• US 8,816,375 B2
• Filed: 06/08/2011
• Issued: 08/26/2014
• Est. Priority Date: 06/10/2010
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Brunner, Herbert, Ninz, Patrick
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US13/698,302
• Publication Number:
  US 20130134473A1
• Time in Patent Office: 1,175 Days
• Field of Search: 438/22, 438 28- 29, 438 46- 52, 257/99
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/92125 the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/92227 the second connecting process involving a wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12036 PN diode
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 2201/10969 : Metallic case or integral heatsink of component electrically connected to a pad on PCB

Abstract

A radiation-emitting semiconductor body is provided which, besides an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation, has a carrier layer that is intended to mechanically stabilize the epitaxial semiconductor layer sequence. The semiconductor body furthermore has contact structures for electrical contacting of the semiconductor body, which respectively have a volume region and a surface bonding region. The surface bonding region is formed from a material which is different from the material of the volume region.

Claims

1. A radiation-emitting semiconductor body, comprising:

an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation;

a carrier layer configured to mechanically stabilize the epitaxial semiconductor layer sequence, wherein the carrier layer comprises a metallic material; and

contact structures for electrical contacting of the semiconductor body, each contact structure having a volume region and a surface bonding region, the surface bonding region being formed from a material that is different from the material of the volume region.

2. The radiation-emitting semiconductor body according to claim 1, wherein the volume region is formed from the same material as the carrier layer.

3. The radiation-emitting semiconductor body according to claim 1, wherein the metallic material is selected from the group consisting of nickel, molybdenum and copper.

4. The radiation-emitting semiconductor body according to claim 1, wherein the surface bonding regions comprise at least one material selected from the group consisting of gold, copper and aluminum.

5. The radiation-emitting semiconductor body according to claim 1, wherein the contact structures are formed by projections, which respectively have a width of between 20 μ

m and 200 μ

m and a height of between 5 μ

m and 50 μ

m, the limits being included.

6. The radiation-emitting semiconductor body according to claim 1, wherein the contact structures are formed by projections, which respectively have a width of between 20 μ

m and 200 μ

m, the limits being included.

7. The radiation-emitting semiconductor body according to claim 1, wherein the contact structures are formed by projections, which respectively have a height of between 5 μ

m and 50 μ

m, the limits being included.

8. The radiation-emitting semiconductor body according to claim 1, wherein each contact structures is formed by a projection, the respective surface bonding regions extending beyond the volume regions on both sides.

9. The radiation-emitting semiconductor body according to claim 1, wherein the surface bonding regions are formed so as to be ultrasound-friction weldable and/or thermocompressible.

16. A radiation-emitting semiconductor component comprising a chip carrier and a radiation-emitting semiconductor body according to claim 1 that is applied onto the chip carrier.

17. The radiation-emitting semiconductor component according to claim 16, wherein the semiconductor body is applied onto the chip carrier by ultrasound-friction welding or thermocompression.

10. A method for producing a radiation-emitting semiconductor body, the method comprising:

providing an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation;

applying a carrier layer onto a main side of the epitaxial semiconductor layer sequence, the carrier layer being configured to mechanically stabilize the epitaxial semiconductor layer sequence, wherein the material of the carrier layer is metallic material;

applying a bondable layer; and

forming contact structures by photolithography on the carrier layer, the contact structures respectively having a volume region and a surface bonding region.

11. The method according to claim 10, further comprising applying a further layer of the same material as the carrier layer between the carrier layer and the bondable layer.

12. The method according to claim 11, wherein the volume regions of the contact structures are formed from the material of the further layer.

13. The method according to claim 10, wherein the volume regions of the contact structures are formed from the material of the carrier layer.

14. The method according to claim 13, wherein the bondable layer is applied in direct contact onto the carrier layer.

15. The method according claim 10, wherein the surface bonding region and/or the bondable layer is/are formed so as to be ultrasound-friction weldable and/or thermocompressible.