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Mosfet package

  • US 8,816,411 B2
  • Filed: 05/31/2013
  • Issued: 08/26/2014
  • Est. Priority Date: 01/28/1999
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor chip including a MOSFET and having a first main surface and a second main surface opposite the first main surface, wherein a source electrode pad and a gate electrode pad are formed over the first main surface, and a drain electrode is formed over the second main surface;

    a source external terminal having a first main surface electrically connected to the source electrode pad of the semiconductor chip and a second main surface opposite the first main surface;

    a gate external terminal having a first main surface electrically connected to the gate electrode pad of the semiconductor chip and a second main surface opposite the first main surface;

    a drain external terminal having a first main surface and a second main surface opposite the first main surface and being electrically connected to the second main surface of the semiconductor chip; and

    a sealing body having a first surface and a second surface opposite the first surface and sealing a semiconductor chip and a part of each of the source, gate, and drain external terminals,wherein the first surface of the sealing body faces to the same direction as a direction to which each of the first main surfaces of the source, gate, and drain external terminals faces,wherein the second surface of the sealing body faces to the same direction as a direction to which each of the second main surfaces of the source, gate, and drain external terminals faces,wherein each of the second main surfaces of the source, gate, and drain external terminals is in a same plane,wherein each of the second main surfaces of the source and gate external terminals is exposed from the second surface inside of the second surface of the sealing body, andwherein, in a second main surface view of each of the external terminals, the gate external terminal has a portion located between the source and drain external terminals in at least one direction.

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