Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a first insulating layer in contact with the gate electrode layer;
an oxide semiconductor layer in contact with the first insulating layer; and
a second insulating layer in contact with the oxide semiconductor layer,wherein the oxide semiconductor layer has a peak of a nitrogen concentration at an interface with the first insulating layer, andwherein the first insulating layer contains nitrogen and has a peak of a nitrogen concentration at an interface with the oxide semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A transistor in which the state of an interface between an oxide semiconductor layer and an insulating film in contact with the oxide semiconductor layer is favorable and a method for manufacturing the transistor are provided. Nitrogen is added to the vicinity of the interface between the oxide semiconductor layer and the insulating film (gate insulating layer) in contact with the oxide semiconductor layer so that the state of the interface of the oxide semiconductor layer becomes favorable. Specifically, the oxide semiconductor layer has a concentration gradient of nitrogen, and a region containing much nitrogen is provided at the interface with the gate insulating layer. A region having high crystallinity can be formed in the vicinity of the interface with the oxide semiconductor layer by addition of nitrogen, whereby the interface state can be stable.
116 Citations
20 Claims
-
1. A semiconductor device comprising:
-
a gate electrode layer; a first insulating layer in contact with the gate electrode layer; an oxide semiconductor layer in contact with the first insulating layer; and a second insulating layer in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer has a peak of a nitrogen concentration at an interface with the first insulating layer, and wherein the first insulating layer contains nitrogen and has a peak of a nitrogen concentration at an interface with the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A semiconductor device comprising:
-
a gate electrode layer; a first insulating layer in contact with the gate electrode layer; an oxide semiconductor layer in contact with the first insulating layer, the oxide semiconductor layer comprising indium and zinc; and a second insulating layer in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer has a peak of a nitrogen concentration at an interface with the first insulating layer, and wherein the first insulating layer contains nitrogen and has a peak of a nitrogen concentration at an interface with the oxide semiconductor layer, and wherein the oxide semiconductor layer includes a crystalline region, the crystalline region having a c-axis being substantially perpendicular to a surface of the oxide semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
Specification
-
- Resources
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei
-
Primary Examiner(s)Lee, Calvin
-
Application NumberUS13/297,802Publication NumberTime in Patent Office1,014 DaysField of Search257 64- 67, 257/325, 257/335, 257/43, 257E21135-E21153, 257/E31.034, 257/E31.047, 438/37, 438/162, 438/104, 438/479, 438/519US Class Current257/325CPC Class CodesH01L 21/02439 MaterialsH01L 21/02513 MicrostructureH01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/0259 MicrostructureH01L 21/02667 Crystallisation or recrysta...H01L 29/1033 with insulated gate, e.g. c...H01L 29/7869 having a semiconductor body...
