Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression
First Claim
1. A resonator structure comprising:
- a first conductive layer of electrodes disposed along an X axis;
a second conductive layer of electrodes disposed along the X axis and offset from the first conductive layer along a Z axis perpendicular to the X axis; and
a piezoelectric layer including a piezoelectric material, the piezoelectric layer disposed between the first conductive layer and the second conductive layer, the piezoelectric layer having a first side and a second side opposite the first side, the first side proximate the first conductive layer, the second side proximate the second conductive layer;
one or more trenches being formed in the piezoelectric layer on the first side in one or more respective space regions between the electrodes of the first conductive layer, the one or more trenches each having a depth configured to facilitate suppression of one or more spurious frequencies outside of a pass band of the resonator structure.
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Abstract
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a resonator structure includes a first conductive layer of electrodes and a second conductive layer of electrodes. A piezoelectric layer including a piezoelectric material is disposed between the first conductive layer and the second conductive layer. One or more trenches can be formed in the piezoelectric layer on one or both sides in space regions between the electrodes. In some implementations, a process for forming the resonator structure includes removing an exposed portion of the piezoelectric layer to define a trench, for instance, by partial etching or performing an isotropic release etch using a XeF2 gas or SF6 plasma. In some other implementations, a portion of a sacrificial layer is removed to define a trench in the piezoelectric layer.
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Citations
24 Claims
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1. A resonator structure comprising:
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a first conductive layer of electrodes disposed along an X axis; a second conductive layer of electrodes disposed along the X axis and offset from the first conductive layer along a Z axis perpendicular to the X axis; and a piezoelectric layer including a piezoelectric material, the piezoelectric layer disposed between the first conductive layer and the second conductive layer, the piezoelectric layer having a first side and a second side opposite the first side, the first side proximate the first conductive layer, the second side proximate the second conductive layer; one or more trenches being formed in the piezoelectric layer on the first side in one or more respective space regions between the electrodes of the first conductive layer, the one or more trenches each having a depth configured to facilitate suppression of one or more spurious frequencies outside of a pass band of the resonator structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A resonator structure comprising:
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first conductive means of electrodes disposed along an X axis; second conductive means of electrodes disposed along the X axis and offset from the first conductive means along a Z axis perpendicular to the X axis; and piezoelectric means including a piezoelectric material, the piezoelectric means disposed between the first conductive means and the second conductive means, the piezoelectric means having a first side and a second side opposite the first side, the first side proximate the first conductive means, the second side proximate the second conductive means; one or more trenches being formed in the piezoelectric means on the first side in one or more respective space regions between the electrodes of the first conductive means, the one or more trenches each having a depth configured to facilitate suppression of one or more spurious frequencies outside of a pass band of the resonator structure. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification