Device and method for inspecting moving semiconductor wafers
First Claim
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1. A system for inspecting defects in semiconductor wafers comprising:
- a) a first device for detecting surface defects from variations in the slope of a surface of the waferb) a second device for detecting surface defects from variations in the intensity of light reflected by a surface of the wafer at a plurality of points, said second device being configured to calculate the intensity of the light at a plurality of image points to generate an image of the reflected intensities;
c) a third device for detecting the intensity of the light diffused by the surface of the wafer;
d) a detection and classification device coupled to an output of each of the first, second and third devices;
e) a light source common to the first device and the second device, the light source comprising a projection member configured to project a pattern of substantially vertical alternate fringes of continuous light and dark bands onto the surface of the wafer, the projection member comprising a screen having a luminosity of at least 300 cd/cm2;
f) a controller for displacing the pattern produced by the light source in at least one direction relative to the wafer;
g) an image capture sensor common to the first, second and third detection devices, the image capture sensor being capable of measuring local light intensity during displacement pattern reflected by the wafer.
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Abstract
Device for inspecting defects in semiconductor wafers, comprising a member for detecting surface defects using variations in the slope of a surface of the wafer, a member for detecting surface defects using variations in the light intensity reflected by a surface of the wafer, at a plurality of points, a member for detecting light intensity scattered by the surface of the wafer, a light source, and a detecting and classifying mechanism connected upstream of said detecting members.
18 Citations
14 Claims
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1. A system for inspecting defects in semiconductor wafers comprising:
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a) a first device for detecting surface defects from variations in the slope of a surface of the wafer b) a second device for detecting surface defects from variations in the intensity of light reflected by a surface of the wafer at a plurality of points, said second device being configured to calculate the intensity of the light at a plurality of image points to generate an image of the reflected intensities; c) a third device for detecting the intensity of the light diffused by the surface of the wafer; d) a detection and classification device coupled to an output of each of the first, second and third devices; e) a light source common to the first device and the second device, the light source comprising a projection member configured to project a pattern of substantially vertical alternate fringes of continuous light and dark bands onto the surface of the wafer, the projection member comprising a screen having a luminosity of at least 300 cd/cm2; f) a controller for displacing the pattern produced by the light source in at least one direction relative to the wafer; g) an image capture sensor common to the first, second and third detection devices, the image capture sensor being capable of measuring local light intensity during displacement pattern reflected by the wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A process for inspecting defects in semiconductor wafers, comprising:
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measuring the slope of a surface of the wafer using a first device for detecting surface defects; measuring variations in the intensity of the light reflected by a surface of the wafer at a plurality of points using a second device for detecting surface defects, wherein the variations of the intensity of the light reflected by the surface of the wafer at a plurality of points is used to generate an image of reflected intensities; detecting an intensity of light diffused by the surface of the wafer using a third device for detecting surface defects; illuminating the surface of the wafer with a light source common to the first device and the second device, the light source comprising a projection member, wherein the surface of the wafer is illuminated by projecting a pattern of substantially vertical alternate fringes of continuous light and dark bands from the projection member displacing the pattern produced by the light source in at least one direction relative to the wafer; measuring local light intensity during displacement of the pattern reflected by the wafer; and
;classifying surface defects using a detection and classification device coupled to the output of each of the first, second, and third devices. - View Dependent Claims (11, 12, 13, 14)
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Specification