Titanium nitride as sensing layer for microwell structure
First Claim
1. A method of fabricating a microwell, the method comprising:
- disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to a gate structure of at least one field effect transistor (FET) in an array structure, wherein the array structure comprises a plurality of FETs, each of the plurality of FETs having an associated gate structure;
disposing an insulation layer on the array structure, wherein the insulation layer lies above the TiN layer; and
etching an opening above the gate structure of the at least one FET to remove the insulation layer above the gate structure and to expose the TiN layer, wherein the insulation layer forms at least one sidewall and the TiN layer forms a bottom surface of the microwell,wherein the disposing the TiN layer comprises disposing the TiN layer above a conduction channel formed by a source and a drain of the FET, wherein the gate structure lies above the conduction channel.
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Abstract
A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.
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Citations
18 Claims
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1. A method of fabricating a microwell, the method comprising:
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disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to a gate structure of at least one field effect transistor (FET) in an array structure, wherein the array structure comprises a plurality of FETs, each of the plurality of FETs having an associated gate structure; disposing an insulation layer on the array structure, wherein the insulation layer lies above the TiN layer; and etching an opening above the gate structure of the at least one FET to remove the insulation layer above the gate structure and to expose the TiN layer, wherein the insulation layer forms at least one sidewall and the TiN layer forms a bottom surface of the microwell, wherein the disposing the TiN layer comprises disposing the TiN layer above a conduction channel formed by a source and a drain of the FET, wherein the gate structure lies above the conduction channel. - View Dependent Claims (2, 3)
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4. A method of fabricating a microwell, the method comprising:
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disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to a gate structure of at least one field effect transistor (FET) in an array structure, wherein the array structure comprises a plurality of FETs, each of the plurality of FETs having an associated gate structure; disposing an insulation layer on the array structure, wherein the insulation layer lies above the TiN layer; and etching an opening above the gate structure of the at least one FET to remove the insulation layer above the gate structure and to expose the TiN layer, wherein the insulation layer forms at least one sidewall and the TiN layer forms a bottom surface of the microwell, wherein the insulation layer comprises at least one layer of silicon nitride and at least one layer silicon dioxide, and wherein the etching comprises removing the layers of silicon nitride and silicon dioxide above the gate structure to expose the TiN layer.
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5. A method of fabricating a microwell, the method comprising:
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disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to a gate structure of at least one field effect transistor (FET) in an array structure, wherein the array structure comprises a plurality of FETs, each of the plurality of FETs having an associated gate structure; disposing an insulation layer on the array structure, wherein the insulation layer lies above the TiN layer; and etching an opening above the gate structure of the at least one FET to remove the insulation layer above the gate structure and to expose the TiN layer, wherein the insulation layer forms at least one sidewall and the TiN layer forms a bottom surface of the microwell, wherein the etching the opening above the gate structure comprises etching the opening with a plasma etch, wherein a power level of the plasma etch is adjusted during the etching of the insulation layer. - View Dependent Claims (6, 7)
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8. A method of fabricating a microwell, the method comprising:
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disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to a gate structure of at least one field effect transistor (FET) in an array structure, wherein the array structure comprises a plurality of FETs, each of the plurality of FETs having an associated gate structure; disposing an insulation layer on the array structure, wherein the insulation layer lies above the TiN layer; disposing an oxide layer on the insulation layer, wherein the oxide layer lies above the insulation layer and the TiN layer; and etching an opening above the gate structure of the at least one FET to remove the insulation and oxide layers above the gate structure and to expose the TiN layer, wherein the insulation and oxide layers form at least one sidewall and the TiN layer forms a bottom surface of the microwell. - View Dependent Claims (9, 10, 11)
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12. A sensor array comprising:
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a plurality of field effect transistors (FETs), wherein at least one FET comprises a gate structure with a conductive layer disposed thereon; and a plurality of microwells coupled to the plurality of FETs, wherein at least one microwell comprises at least one sidewall formed from at least one of insulation layer and an oxide layer and a bottom surface formed from a titanium nitride (TiN) layer, the TiN layer coupled to the conductive layer, wherein the insulation layer comprises at least one layer of silicon nitride and at least one layer of silicon dioxide and lies above the TiN layer. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A sensor array comprising:
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a plurality of field effect transistors (FETs), wherein at least one FET comprises a gate structure with a conductive layer disposed thereon; and a plurality of microwells coupled to the plurality of FETs, wherein at least one microwell comprises at least one sidewall formed from at least one of insulation layer and an oxide layer and a bottom surface formed from a titanium nitride (TiN) layer, the TiN layer coupled to the conductive layer, wherein the TiN layer is above a conduction channel formed by a source and a drain of the FET, wherein the gate structure lies above the conduction channel.
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Specification