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Internal electrical contact for enclosed MEMS devices

  • US 8,822,252 B2
  • Filed: 09/20/2013
  • Issued: 09/02/2014
  • Est. Priority Date: 01/30/2013
  • Status: Active Grant
First Claim
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1. A method of fabricating electrical connections in an integrated MEMS device comprising:

  • forming a MEMS wafer comprising;

    forming one or more cavities in a first semiconductor layer;

    bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer;

    etching at least one via through the second semiconductor layer and the dielectric layer;

    depositing a conductive material on the second semiconductor layer and filling the at least one via;

    patterning and etching the conductive material to form at least one standoff;

    depositing a germanium layer on the conductive material;

    patterning and etching the germanium layer;

    patterning and etching the second semiconductor layer to define one or more MEMS structures; and

    bonding the MEMS wafer to a base substrate using a eutectic bond between the germanium layer on the one or more standoffs and aluminum pads of the base substrate.

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