Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device

• US 8,822,263 B2
• Filed: 06/29/2009
• Issued: 09/02/2014
• Est. Priority Date: 06/30/2008
• Status: Expired due to Fees

• Current Assignee: ROHM Co., Ltd., Tokyo University of Agriculture and Technology
• Original Assignee: ROHM Co., Ltd., Tokyo Electron Limited, Tokyo University of Agriculture and Technology
• Inventors: Koukitu, Akinori, Kumagai, Yoshinao, Fujii, Tetsuo, Yoshii, Naoki
• Primary Examiner(s): Kim, Jay C
• Application Number:
  US12/493,765
• Publication Number:
  US 20100006836A1
• Time in Patent Office: 1,891 Days
• Field of Search: 257/43, 438/104, 438/761, 438/763, 117/89, 117/93, 117/105
• US Class Current: 438/104
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 25/20 the substrate being of the same materials as the epitaxial layer
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02634 Homoepitaxy
• CPC Class Codes: H01L 29/22 including, apart from doping materials or other impurities, only AIIBVI compounds

Abstract

It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.

Claims

1. A hetero epitaxial growth method comprising:

forming a buffer layer in contact with a heterogeneous substrate, the heretogeneous substrate composed of a substrate selected from the group consisting of an a-plane sapphire substrate, a silicon substrate, a SiC substrate, a GaAs substrate, a GaP substrate, and a GaN-based substrate; and

performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material, wherein

the step of forming the buffer layer includes the step of performing crystal growth of another zinc oxide based semiconductor layer on the heterogeneous substrate using a group II metal and an oxygen material, and zinc which is an elemental metal without any bonding to another element is used as the group II metal, wherein

a reactant gas is zinc and water in the step of forming the buffer layer, and a reactant gas is zinc chloride and water in the step of performing the crystal growth of the zinc oxide based semiconductor layer, and wherein

in the step of performing the crystal growth of the zinc oxide based semiconductor layer, a crystal growth temperature is not less than 800 degrees C., and a supplying ratio VI/II of a group VI element and a group II element is more than 1 and not more than 100.

2. The hetero epitaxial growth method according to claim 1, wherein

in the step of performing the crystal growth of the zinc oxide based semiconductor layer, the crystal growth temperature is approximately 1000 degrees C.

3. The hetero epitaxial growth method according to claim 1, wherein

in the step of performing the crystal growth of the zinc oxide based semiconductor layer, the supplying ratio VI/II of a group VI element and a group II element is approximately 20.