Method for reducing forming voltage in resistive random access memory
First Claim
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1. A method for producing resistive switching elements, the method comprising:
- depositing a first electrode onto a substrate;
depositing a first resistive switching film onto the first electrode,wherein the first resistive switching film comprises a first dielectric material configured to develop conductive pathways during application of a predetermined voltage and further configured to maintain said conductive pathways after said predetermined voltage is removed,wherein depositing the first resistive switching film does not cause formation of an interfacial oxide layer on the first electrode;
depositing a second electrode; and
further comprising depositing a second resistive switching film onto the first resistive switching film prior to depositing the second electrode, wherein the first resistive switching film and the second resistive switching film form a stack, the stack being configured to develop conductive pathways during application of a predetermined voltage and further configured to maintain said conductive pathways after said predetermined voltage is removed.
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Abstract
Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
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19 Claims
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1. A method for producing resistive switching elements, the method comprising:
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depositing a first electrode onto a substrate; depositing a first resistive switching film onto the first electrode, wherein the first resistive switching film comprises a first dielectric material configured to develop conductive pathways during application of a predetermined voltage and further configured to maintain said conductive pathways after said predetermined voltage is removed, wherein depositing the first resistive switching film does not cause formation of an interfacial oxide layer on the first electrode; depositing a second electrode; and further comprising depositing a second resistive switching film onto the first resistive switching film prior to depositing the second electrode, wherein the first resistive switching film and the second resistive switching film form a stack, the stack being configured to develop conductive pathways during application of a predetermined voltage and further configured to maintain said conductive pathways after said predetermined voltage is removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification