Light emitting device and electronic apparatus

• US 8,822,982 B2
• Filed: 03/12/2010
• Issued: 09/02/2014
• Est. Priority Date: 06/20/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Takayama, Toru
• Primary Examiner(s): Yang, Minchul
• Application Number:
  US12/722,789
• Publication Number:
  US 20100163859A1
• Time in Patent Office: 1,635 Days
• Field of Search: 257/79, 257/40, 257/E51.018, 257/19, 257/13
• US Class Current: 257/40
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/127 comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/8794 Arrangements for heating and cooling
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

Claims

1. A light emitting device comprising:

a first substrate;

a first insulating layer over the first substrate;

a second insulating layer over the first insulating layer;

a first transistor over the second insulating layer;

a driver circuit comprising a second transistor over the second insulating layer;

a third insulating layer over the driver circuit and the first transistor;

a light emitting element over the third insulating layer, and comprising;

a first electrode electrically connected to the first transistor, wherein an end portion of the first electrode is covered with a bank;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer,

an organic material layer over and in direct contact with the second electrode; and

a second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer,

wherein the second electrode covers an end portion of the bank.

2. The light emitting device according to claim 1, wherein the light emitting element is covered by a third layer comprising Al, N and O.

3. The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O and the second layer comprising Al, N and O contains nitrogen of 2.5 atm % to 47.5 atm %.

4. The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O and the second layer comprising Al, N and O contains a 13 group element or a 15 group element of 0.1 atm % to 5 atm % as impurities.

5. The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O and the second layer comprising Al, N and O contains a phosphorous element or boron element of 0.1 atm % to 5 atm %.

6. The light emitting device according to claim 1, wherein at least one of the first substrate and the second substrate comprises at least one of polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide.

7. The light emitting device according to claim 1, wherein each of the first transistor and the second transistor comprises a semiconductor film comprising an amorphous silicon film or a polysilicon film.

8. The light emitting device according to claim 1, wherein the second electrode comprises ITO.

9. The light emitting device according to claim 1, wherein the organic material layer comprises organic resin.

10. The light emitting device according to claim 1, further comprising a layer comprising an organic resin in contact with an end portion of the second substrate.

11. The light emitting device according to claim 1, wherein the organic material layer is in contact with an end portion of the second electrode.

12. A light emitting device comprising:

a first substrate;

a first insulating layer over the first substrate;

a second insulating layer over the first insulating layer;

a first transistor over the second insulating layer;

a driver circuit comprising a second transistor over the second insulating layer;

a third insulating layer over the driver circuit and the first transistor;

a light emitting element over the third insulating layer, and comprising;

a first electrode electrically connected to the first transistor;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

an organic material layer over and in direct contact with the second electrode, wherein the organic material layer overlaps with the second transistor;

a second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer.

13. The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate wherein the layer comprising Al, N and O contains nitrogen of 2.5 atm % to 47.5 atm %.

14. The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate, wherein the layer comprising Al, N and O contains a 13 group element or a 15 group element of 0.1 atm % to 5 atm % as impurities.

15. The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate, wherein the layer comprising Al, N and O contains a phosphorous element or boron element of 0.1 atm % to 5 atm %.

16. The light emitting device according to claim 12, wherein at least one of the first substrate and the second substrate comprises at least one of polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide.

17. The light emitting device according to claim 12, wherein each of the first transistor and the second transistor comprises a semiconductor film comprising an amorphous silicon film or a polysilicon film.

18. The light emitting device according to claim 12, wherein the second electrode comprises ITO.

19. The light emitting device according to claim 12, wherein the organic material layer comprises organic resin.

20. The light emitting device according to claim 12, wherein an end portion of the first electrode is covered by a bank.

21. The light emitting device according to claim 12, further comprising a layer comprising an organic resin in contact with an end portion of the second substrate.

22. The light emitting device according to claim 12, wherein the organic material layer is in contact with an end portion of the second electrode.

23. A light emitting device comprising:

a first substrate;

a first insulating layer over the first substrate;

a second insulating layer over the first insulating layer;

a first transistor over the second insulating layer;

a driver circuit comprising a second transistor over the second insulating layer;

a third insulating layer over the driver circuit and the first transistor;

a light emitting element over the third insulating layer, and comprising;

a first electrode electrically connected to the first transistor;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer, wherein the second electrode overlaps with the second transistor,

an organic material layer over and in direct contact with the second electrode; and

a second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer.

24. The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O, and the second layer comprising Al, N and O contains nitrogen of 2.5 atm % to 47.5 atm %.

25. The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O, and the second layer comprising Al, N and O contains a 13 group element or a 15 group element of 0.1 atm % to 5 atm % as impurities.

26. The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O, and the second layer comprising Al, N and O contains a phosphorous element or boron element of 0.1 atm % to 5 atm %.

27. The light emitting device according to claim 23, wherein at least one of the first substrate and the second substrate comprises at least one of polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide.

28. The light emitting device according to claim 23, wherein each of the first transistor and the second transistor comprises a semiconductor film comprising an amorphous silicon film or a polysilicon film.

29. The light emitting device according to claim 23, wherein the second electrode comprises ITO.

30. The light emitting device according to claim 23, wherein the organic material layer comprises organic resin.

31. The light emitting device according to claim 23, wherein an end portion of the first electrode is covered by a bank.

32. The light emitting device according to claim 23, further comprising a layer comprising an organic resin in contact with an end portion of the second substrate.

33. The light emitting device according to claim 23, wherein the organic material layer is in contact with an end portion of the second electrode.