Semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A display device comprising:
- a transistor comprising;
a gate electrode;
a first insulating film over the gate electrode;
a semiconductor film over the first insulating film, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion;
a source electrode over and electrically connected to the semiconductor film; and
a drain electrode over and electrically connected to the semiconductor film;
a pixel electrode over and electrically connected to one of the source electrode and the drain electrode,a second insulating film over the semiconductor film,wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed Portion,wherein the gate electrode overlaps with the recessed portion, andwherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion.
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Abstract
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
266 Citations
16 Claims
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1. A display device comprising:
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a transistor comprising; a gate electrode; a first insulating film over the gate electrode; a semiconductor film over the first insulating film, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion; a source electrode over and electrically connected to the semiconductor film; and a drain electrode over and electrically connected to the semiconductor film; a pixel electrode over and electrically connected to one of the source electrode and the drain electrode, a second insulating film over the semiconductor film, wherein the second insulating film comprises a region located between the source electrode and the drain electrode, and the region is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed Portion, wherein the gate electrode overlaps with the recessed portion, and wherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a transistor comprising; a gate electrode; an insulating film over the gate electrode; a first semiconductor film over the insulating film, the first semiconductor film having a recessed portion; a second semiconductor film over the first semiconductor film; a third semiconductor film over the first semiconductor film; a source electrode over and electrically connected to the second semiconductor film; and a drain electrode over and electrically connected to the third semiconductor film; a pixel electrode over and electrically connected to one of the source electrode and the drain electrode, wherein the gate electrode overlaps with the recessed portion, wherein a gap between the source electrode and the drain electrode is larger than a width of the recessed portion, and wherein a gap between the second semiconductor film and the third semiconductor film is larger than the width of the recessed portion. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification