Light-emitting diode with current-spreading region
First Claim
1. A light-emitting diode (LED) device comprising:
- a substrate;
an LED structure formed on the substrate, the LED structure including an upper layer and a lower layer with a light-emitting layer positioned between the upper layer and the lower layer; and
a current blocking layer formed in the upper layer, wherein the current blocking layer comprises a region of resistive material comprising implanted impurities;
wherein;
the upper layer includes a first layer and a second layer;
the current blocking layer is formed in the first layer; and
the second layer and the light-emitting layer are disposed on opposite sides of the first layer.
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Abstract
A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.
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Citations
19 Claims
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1. A light-emitting diode (LED) device comprising:
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a substrate; an LED structure formed on the substrate, the LED structure including an upper layer and a lower layer with a light-emitting layer positioned between the upper layer and the lower layer; and a current blocking layer formed in the upper layer, wherein the current blocking layer comprises a region of resistive material comprising implanted impurities; wherein; the upper layer includes a first layer and a second layer; the current blocking layer is formed in the first layer; and the second layer and the light-emitting layer are disposed on opposite sides of the first layer. - View Dependent Claims (2, 3, 4, 5)
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6. A photonic lighting device, comprising:
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a substrate; a first layer disposed over the substrate, the first layer containing a first group III-V compound having a first type of conductivity; an active layer disposed over the first layer; a second layer disposed over the active layer, the second layer containing a second group III-V compound having a second type of conductivity different from the first type, wherein the second layer has a same material composition throughout; a current blocking layer disposed in the second layer; and an electrode disposed over, and electrically coupled to, the second layer, the electrode being aligned with the currently blocking layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A light-emitting diode, comprising:
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a substrate; a first semiconductor layer located over the substrate, the first semiconductor layer containing an n-doped group III-V compound; a multiple quantum well located over the first semiconductor layer; a second semiconductor layer located over the multiple quantum well, the second semiconductor layer containing a p-doped III-V compound having a uniform material composition throughout; a resistive current blocking element located in the second semiconductor layer; a first electrode located over, and electrically coupled to, the first semiconductor layer; a second electrode located over, and electrically coupled to, the second semiconductor layer, the second electrode being vertically aligned with the currently blocking element. - View Dependent Claims (16, 17, 18, 19)
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Specification