Semiconductor device

• US 8,823,082 B2
• Filed: 08/09/2011
• Issued: 09/02/2014
• Est. Priority Date: 08/19/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yanagisawa, Makoto
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US13/205,671
• Publication Number:
  US 20120043542A1
• Time in Patent Office: 1,120 Days
• Field of Search: 257/57, 257/192, 257/329, 257/401, 257/E29.003, 257/E29.255, 257/E29.262, 438/104, 438/156
• US Class Current: 257/329
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention is a semiconductor device including a first electrode over a substrate; a pair of oxide semiconductor films in contact with the first electrode; a second electrode in contact with the pair of oxide semiconductor films; a gate insulating film covering at least the first electrode and the pair of oxide semiconductor films; and a third electrode that is in contact with the gate insulating film and is formed at least between the pair of oxide semiconductor films. When the donor density of the oxide semiconductor films is 1.0×10¹³/cm³ or less, the thickness of the oxide semiconductor films is made larger than the in-plane length of each side of the oxide semiconductor films which is in contact with the first electrode.

Claims

1. A semiconductor device comprising:

a first electrode;

a first oxide semiconductor film and a second oxide semiconductor film, which are in contact with the first electrode;

a second electrode overlapping with the first electrode with the first oxide semiconductor film and the second oxide semiconductor film interposed therebetween;

a gate insulating film covering at least the first electrode, the first oxide semiconductor film and the second oxide semiconductor film; and

a third electrode which is in contact with the gate insulating film and is formed at least between the first oxide semiconductor film and the second oxide semiconductor film,

wherein a portion of the gate insulating film is in contact with the first electrode.

2. The semiconductor device according to claim 1, wherein the third electrode has a closed-loop structure.

3. The semiconductor device according to claim 1, wherein the third electrode faces all sidewalls of the first oxide semiconductor film and the second oxide semiconductor film with the gate insulating film interposed therebetween.

4. The semiconductor device according to claim 1,

wherein the first electrode serves as one of a source electrode and a drain electrode,

wherein the second electrode serves as the other of the source electrode and the drain electrode, and

wherein the third electrode serves as a gate electrode.

5. The semiconductor device according to claim 1, wherein when a donor density of the first oxide semiconductor film and the second oxide semiconductor film is 1.0×

10¹³/cm³ or less, a thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is set 9 times or more as large as a length of each side of the first oxide semiconductor film and the second oxide semiconductor film, which is in contact with the first electrode.

6. The semiconductor device according to claim 1, wherein when a donor density of the first oxide semiconductor film and the second oxide semiconductor film is more than 1.0×

10¹³/cm³, a thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is set 11 times or more as large as a length of each side of the first oxide semiconductor film and the second oxide semiconductor film, which is in contact with the first electrode.

7. A semiconductor device comprising:

a first electrode;

a first oxide semiconductor film and a second oxide semiconductor film, which are in contact with the first electrode;

a second electrode overlapping with the first electrode with the first oxide semiconductor film and the second oxide semiconductor film interposed therebetween;

a gate insulating film covering at least the first electrode, the first oxide semiconductor film and the second oxide semiconductor film; and

a third electrode which is in contact with the gate insulating film and is formed at least between the first oxide semiconductor film and the second oxide semiconductor film,

wherein a thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is larger than a length of each side of the first oxide semiconductor film and the second oxide semiconductor film, which is in contact with the first electrode, and

wherein a portion of the gate insulating film is in contact with the first electrode.

8. The semiconductor device according to claim 7, wherein the third electrode has a closed-loop structure.

9. The semiconductor device according to claim 7, wherein the third electrode faces all sidewalls of the first oxide semiconductor film and the second oxide semiconductor film with the gate insulating film interposed therebetween.

10. The semiconductor device according to claim 7,

wherein the first electrode serves as one of a source electrode and a drain electrode,

wherein the second electrode serves as the other of the source electrode and the drain electrode, and

wherein the third electrode serves as a gate electrode.

11. The semiconductor device according to claim 7, wherein when a donor density of the first oxide semiconductor film and the second oxide semiconductor film is 1.0×

10¹³/cm³ or less, the thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is set 9 times or more as large as the length of each side of the first oxide semiconductor film and the second oxide semiconductor film, which is in contact with the first electrode.

12. The semiconductor device according to claim 7, wherein when a donor density of the first oxide semiconductor film and the second oxide semiconductor film is more than 1.0×

10¹³/cm³, the thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is set 11 times or more as large as the length of each side of the first oxide semiconductor film and the second oxide semiconductor film, which is in contact with the first electrode.

13. A semiconductor device comprising:

a first electrode;

a first oxide semiconductor film, a second oxide semiconductor film and a third oxide semiconductor film, which are in contact with the first electrode;

a second electrode overlapping with the first electrode with the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film interposed therebetween;

a gate insulating film covering at least the first electrode, the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film; and

a third electrode which is in contact with the gate insulating film and is formed at least between the first oxide semiconductor film and the second oxide semiconductor film and between the second oxide semiconductor film and the third oxide semiconductor film,

wherein a portion of the gate insulating film is in contact with the first electrode.

14. The semiconductor device according to claim 13, wherein the third electrode has a closed-loop structure.

15. The semiconductor device according to claim 13, wherein the third electrode faces all sidewalls of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film with the gate insulating film interposed therebetween.

16. The semiconductor device according to claim 13,

wherein the first electrode serves as one of a source electrode and a drain electrode,

wherein the second electrode serves as the other of the source electrode and the drain electrode, and

wherein the third electrode serves as a gate electrode.

17. The semiconductor device according to claim 13, wherein when a donor density of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is 1.0×

10¹³/cm³ or less, a thickness of each of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is set 9 times or more as large as a length of each side of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film, which is in contact with the first electrode.

18. The semiconductor device according to claim 13, wherein when a donor density of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is more than 1.0×

10¹³/cm³, a thickness of each of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is set 11 times or more as large as a length of each side of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film, which is in contact with the first electrode.

19. A semiconductor device comprising:

a first electrode;

a first oxide semiconductor film, a second oxide semiconductor film and a third oxide semiconductor film, which are in contact with the first electrode;

a second electrode overlapping with the first electrode with the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film interposed therebetween;

a gate insulating film covering at least the first electrode, the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film; and

a third electrode which is in contact with the gate insulating film and is formed at least between the first oxide semiconductor film and the second oxide semiconductor film and between the second oxide semiconductor film and the third oxide semiconductor film,

wherein a thickness of each of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is larger than a length of each side of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film, which is in contact with the first electrode, and

wherein a portion of the gate insulating film is in contact with the first electrode.

20. The semiconductor device according to claim 19, wherein the third electrode has a closed-loop structure.

21. The semiconductor device according to claim 19, wherein the third electrode faces all sidewalls of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film with the gate insulating film interposed therebetween.

22. The semiconductor device according to claim 19,

wherein the first electrode serves as one of a source electrode and a drain electrode,

wherein the second electrode serves as the other of the source electrode and the drain electrode, and

wherein the third electrode serves as a gate electrode.

23. The semiconductor device according to claim 19, wherein when a donor density of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is 1.0×

10¹³/cm³ or less, the thickness of each of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is set 9 times or more as large as the length of each side of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film, which is in contact with the first electrode.

24. The semiconductor device according to claim 19, wherein when a donor density of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is more than 1.0×

10¹³/cm³, the thickness of each of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film is set 11 times or more as large as the length of each side of the first oxide semiconductor film, the second oxide semiconductor film and the third oxide semiconductor film, which is in contact with the first electrode.