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Semiconductor and optoelectronic devices

  • US 8,823,122 B2
  • Filed: 03/16/2012
  • Issued: 09/02/2014
  • Est. Priority Date: 10/13/2010
  • Status: Expired due to Fees
First Claim
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1. An integrated device, comprising:

  • a first crystalline layer covered by an oxide layer,a second crystalline layer overlying said oxide layer,wherein said first and second crystalline layers are image sensor layers,and said device comprises a third crystalline layer, whereinsaid third crystalline layer comprises single crystal transistors.

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