Semiconductor and optoelectronic devices
First Claim
Patent Images
1. An integrated device, comprising:
- a first crystalline layer covered by an oxide layer,a second crystalline layer overlying said oxide layer,wherein said first and second crystalline layers are image sensor layers,and said device comprises a third crystalline layer, whereinsaid third crystalline layer comprises single crystal transistors.
1 Assignment
0 Petitions
Accused Products
Abstract
An integrated device, the device including a first crystalline layer covered by an oxide layer, a second crystalline layer overlying the oxide layer, wherein the first and second crystalline layers are image sensor layers, and the device includes a third crystalline layer, wherein the third crystalline layer includes single crystal transistors.
-
Citations
22 Claims
-
1. An integrated device, comprising:
-
a first crystalline layer covered by an oxide layer, a second crystalline layer overlying said oxide layer, wherein said first and second crystalline layers are image sensor layers, and said device comprises a third crystalline layer, wherein said third crystalline layer comprises single crystal transistors. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. An integrated image sensor, comprising:
-
a first mono-crystal layer to comprise a plurality of image sensor pixels and alignment marks, and an oxide layer overlaying and on top of said first mono-crystal layer, and a second mono-crystal layer to comprise a plurality of second image sensor pixels aligned to said alignment marks, and said second mono-crystal layer overlaying said oxide layer, and a third mono-crystal layer, wherein said third mono-crystal layer to comprise a plurality of single crystal transistors aligned to said alignment marks. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
-
-
15. An integrated device, comprising:
-
a first mono-crystal layer to comprise a plurality of single crystal transistors and alignment marks, and an overlaying oxide on top of said first mono-crystal layer, and a second mono-crystal layer overlaying said oxide, and wherein said second mono-crystal layer to comprise a plurality of image sensor pixels aligned to said alignment marks. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
-
Specification