Semiconductor device with oxide semiconductor
First Claim
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1. A semiconductor device comprising:
- a first transistor comprising a first terminal, a second terminal, and a gate;
a second transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the first terminal of the first transistor;
a third transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the second terminal of the second transistor;
a capacitor comprising a first terminal and a second terminal, the first terminal electrically connected to the second terminal of the second transistor and the first terminal of the third transistor;
a fourth transistor comprising a first terminal, a second terminal, and a gate electrically connected to the first terminal of the first transistor and the first terminal of the second transistor;
a first inverter comprising an input terminal and an output terminal, the input terminal electrically connected to the gate of the first transistor, the output terminal electrically connected to the gate of the second transistor;
a second inverter comprising an input terminal and an output terminal, the output terminal electrically connected to the input terminal of the first inverter;
a fifth transistor comprising a first terminal, a second terminal, and a gate, the second terminal electrically connected to the first terminal of the fourth transistor; and
a plurality of transistors electrically connected in series, a gate and a first terminal of each of the plurality of transistors electrically connected to each other, one of the plurality of transistors comprising the gate electrically connected to the gate of the fifth transistor,wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises an oxide semiconductor layer comprising indium, zinc, and a metal element other than indium and zinc,wherein each of the first transistor, the second transistor, and the third transistor is an re-channel type transistor, andwherein the fourth transistor is a depletion type transistor.
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Abstract
The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
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Citations
30 Claims
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1. A semiconductor device comprising:
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a first transistor comprising a first terminal, a second terminal, and a gate; a second transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the first terminal of the first transistor; a third transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the second terminal of the second transistor; a capacitor comprising a first terminal and a second terminal, the first terminal electrically connected to the second terminal of the second transistor and the first terminal of the third transistor; a fourth transistor comprising a first terminal, a second terminal, and a gate electrically connected to the first terminal of the first transistor and the first terminal of the second transistor; a first inverter comprising an input terminal and an output terminal, the input terminal electrically connected to the gate of the first transistor, the output terminal electrically connected to the gate of the second transistor; a second inverter comprising an input terminal and an output terminal, the output terminal electrically connected to the input terminal of the first inverter; a fifth transistor comprising a first terminal, a second terminal, and a gate, the second terminal electrically connected to the first terminal of the fourth transistor; and a plurality of transistors electrically connected in series, a gate and a first terminal of each of the plurality of transistors electrically connected to each other, one of the plurality of transistors comprising the gate electrically connected to the gate of the fifth transistor, wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises an oxide semiconductor layer comprising indium, zinc, and a metal element other than indium and zinc, wherein each of the first transistor, the second transistor, and the third transistor is an re-channel type transistor, and wherein the fourth transistor is a depletion type transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first transistor comprising a first terminal, a second terminal, and a gate; a second transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the first terminal of the first transistor; a third transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the second terminal of the second transistor; a capacitor comprising a first terminal and a second terminal, the first terminal electrically connected to the second terminal of the second transistor and the first terminal of the third transistor; a fourth transistor comprising a first terminal, a second terminal, and a gate electrically connected to the first terminal of the first transistor and the first terminal of the second transistor; a first inverter comprising an input terminal and an output terminal, the input terminal electrically connected to the gate of the first transistor, the output terminal electrically connected to the gate of the second transistor; a second inverter comprising an input terminal and an output terminal, the output terminal electrically connected to the input terminal of the first inverter; a fifth transistor comprising a first terminal, a second terminal, and a gate, the second terminal electrically connected to the first terminal of the fourth transistor; a plurality of transistors electrically connected in series, a gate and a first terminal of each of the plurality of transistors electrically connected to each other, one of the plurality of transistors comprising the gate electrically connected to the gate of the fifth transistor; and a resistor electrically connected between the first terminal of the fifth transistor and the plurality of transistors, wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises an oxide semiconductor layer comprising indium, zinc, and a metal element other than indium and zinc, wherein each of the first transistor, the second transistor, and the third transistor is an re-channel type transistor, and wherein the fourth transistor is a depletion type transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a first transistor comprising a first terminal, a second terminal, and a gate; a second transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the first terminal of the first transistor; a third transistor comprising a first terminal, a second terminal, and a gate, the first terminal electrically connected to the second terminal of the second transistor; a capacitor comprising a first terminal and a second terminal, the first terminal electrically connected to the second terminal of the second transistor and the first terminal of the third transistor; a fourth transistor comprising a first terminal, a second terminal, and a gate electrically connected to the first terminal of the first transistor and the first terminal of the second transistor; a first inverter comprising an input terminal and an output terminal, the input terminal electrically connected to the gate of the first transistor, the output terminal electrically connected to the gate of the second transistor; a second inverter comprising an input terminal and an output terminal, the output terminal electrically connected to the input terminal of the first inverter; a fifth transistor comprising a first terminal, a second terminal, and a gate, the second terminal electrically connected to the first terminal of the fourth transistor; and a plurality of transistors electrically connected in series, a gate and a first terminal of each of the plurality of transistors electrically connected to each other, one of the plurality of transistors comprising the gate electrically connected to the gate of the fifth transistor; and an AND circuit comprising input terminals and an output terminal, the output terminal electrically connected to the gate of the third transistor, wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises an oxide semiconductor layer comprising indium, zinc, and a metal element other than indium and zinc, wherein the oxide semiconductor layer in each of the first transistor, the second transistor, and the third transistor is an i-type or substantially i-type oxide semiconductor layer, wherein the oxide semiconductor layer in the fourth transistor is an n-type oxide semiconductor layer, and wherein each of the first transistor, the second transistor, and the third transistor is an n-channel type transistor, and wherein the fourth transistor is a depletion type transistor. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification