RF layered module using three dimensional vertical wiring and disposing method thereof

• US 8,824,163 B2
• Filed: 08/25/2011
• Issued: 09/02/2014
• Est. Priority Date: 09/15/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Young Il, Song, In Sang, Kim, Duck Hwan, Kim, Chul Soo, Shin, Jea Shik, Kim, Hyung Rak, Lee, Jae Chun, Park, Yun Kwon
• Primary Examiner(s): Chen, Xiaoliang
• Application Number:
  US13/217,371
• Publication Number:
  US 20120063106A1
• Time in Patent Office: 1,104 Days
• Field of Search: 361/792, 361/728, 361/761, 361/800, 257/40, 257/528, 257/659, 257/678, 257/686, 257/690, 257/737, 257/738, 438/55, 438/107, 438/108, 438/109, 333/133, 333/189
• US Class Current: 361/792
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2225/0652 Bump or bump-like direct electrical connections from substrate to substrate
• CPC Class Codes: H01L 2225/06548 Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 25/0652 the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base

Abstract

Provided is a structure and disposing method of a radio frequency (RF) layered module using three dimensional (3D) vertical wiring. A first wafer in the RF layered module having the 3D vertical wiring may include a first RF device and at least one first via-hole. A second wafer may include a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole. A vertical wiring may connect the at least one first via-hole and the at least one second via-hole. The vertical wiring may be configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.

Claims

1. A radio frequency (RF) layered module using three dimensional (3D) vertical wiring, the RF layered module comprising:

a first wafer provided with a first RF device and a plurality of via holes;

a second wafer provided with a second RF device and a plurality of via holes which are disposed at locations corresponding to locations of the plurality of via holes of the first wafer;

a plurality of penetrating electrodes configured to be connected to an external device through a bottom surface of the plurality of via holes of the first wafer or a top surface of the plurality of via holes of the second wafer; and

a plurality of vertical wirings comprising a first vertical wiring connecting only the first RF device, but not the second RF device, to a first penetrating electrode through a first via hole of each of the first and second wafers, and a second vertical wiring connecting only the second RF device, but not the first RF device, to a second penetrating electrode through a second via hole of each of the first and second wafers.

2. The RF layered module of claim 1, further comprising:

a first electrode connecting the first via-hole of the first wafer and the first RF device.

3. The RF layered module of claim 1, wherein:

a top surface of the first wafer has a flat structure, and

the first RF device is disposed on the top surface of the first wafer.

4. The RF layered module of claim 1, wherein:

a top surface of the first wafer has a cavity formed in a predetermined portion, and

the first RF device is disposed in the cavity.

5. The RF layered module of claim 1, wherein:

a top surface and a bottom surface of the first wafer each have a cavity formed in a predetermined portion, and

the first RF device is disposed in the cavity formed on the top surface.

6. The RF layered module of claim 1, wherein:

a top surface and a bottom surface of the first wafer each have a cavity formed in a predetermined portion,

the first RF device is disposed in the cavity formed on the top surface, and

a third RF device is disposed in the cavity formed on the bottom surface.

7. The RF layered module of claim 1, wherein the first wafer is provided with a plurality of RF devices performing different RF functions, and forming multiple arrays on the first wafer.

8. The RF layered module of claim 1, wherein the first wafer and the second wafer are coupled using a eutectic bonding, a ball grid array bonding, a fusion bonding, a polymer bonding, or any combination thereof.

9. The RF layered module of claim 2, further comprising:

a ball grid connecting the first RF device and the first electrode,

wherein the first electrode is disposed on a top side of the first wafer.

10. The RF layered module of claim 2, further comprising:

a wire connecting the first RF device and the first electrode,

wherein the first electrode is disposed on a top side of the first wafer.